5G base station uses 450W with integrated GaN HEMT, providing 55W power with 9dB backoff.
Farad has started handling products from Innogration Technologies (China), an ISO9000/ISO14000 certified manufacturer that designs and manufactures HF and high-frequency GaN/LDMOS power transistors. They have numerous achievements in semiconductor manufacturing equipment, industrial microwave amplifiers and generators, and applications such as 4G/5G communications in Japan and around the world. Aiming for high efficiency and high output, they offer a 390W GaN HEMT in the 2.45GHz band and a 100W GaN Doherty module in the 5GHz band, compatible with various packages. *For more details, please download the PDF document or feel free to contact us.
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