Last Updated： Aggregation Period:Jul 30, 2025～Aug 26, 2025
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Jul 30, 2025～Aug 26, 2025
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Jul 30, 2025～Aug 26, 2025
This ranking is based on the number of page views on our site.
346～360 item / All 623 items
Maximum forward voltage: 30V Maximum reverse voltage: 15KV Maximum forward current: 1.0A Maximum reverse current: 10μA
QLG15KV/1.0A high voltage high frequency rectifier diode full bridge : Feature: Avalanche characteristic More sizes available vacuum molded, non-corrosive epoxy resin case Tj:-40℃——+120℃ Application: Electrostatic cleaning High Voltage testing equipment General purpose high voltage rectigier
Maximum forward voltage: 14.4V Maximum reverse voltage: 12KV Maximum forward current: 3.0A Maximum reverse current: 200μA
Hot Selling QL12KV/3.0A high frequency switching rectifier full bridge : Feature: Avalanche characteristic More sizes available vacuum molded, non-corrosive epoxy resin case Tj:-40℃——+120℃ Application: Electrostatic cleaning High Voltage testing equipment General purpose high voltage rectigier
Peak reverse voltage: 15KV; average forward current: 200mA; surge current: 20A; storage temperature: -40 to +120 ℃; junction temperature: 120℃.
Number Item Symbol Rating Unit 1 Peak Repetitive Reverse Voltage Vrrm 15 KV 2 Maximum Junction Temperature Tjmax 120 ℃ 3 Storage Temperature Tstg -40~+120 ℃ 4 Average Forward Current Io 200 mA 5 Surge Forward Current Ifsm 20 A Number Item Symbol Rating Unit Condition 1 Room Temperature Reverse Current Ir1 5.0max uA Vr=Vrrm 2 High Temperature Reverse Current Ir2 50max uA Vr=Vrrm,Tamb=100 ℃ 3 Forward Peak Voltage Vf 35.0 V If=350mA 4 Reverse Recovery Time Trr 100 nS If=50mA,Ir=100mA
High Voltage Rectifier Board 2CLG250KV/3.0A PCB Fast Recovery 250KV
Extreme(Absolute Maximum Rating) Item Symbol Unit Conditions Vlotage Revetitive Peak Reverse Voltage Vrrm KV Ta=25ºC Ir=1.0mA 250.0 Peak Working Reverse Voltage Vrwm KV Ta=25ºC Ir=1.0mA 250.0 No-Revetitive Peak Reverse Voltage Vrsm KV Ta=25ºC Ir=1.0mA 300.0 Average Forward Current Io A 3.0 Surge Forward Output Current Ifsm A 40.0 Operating Ambient Temperature Ta ºC -40~+150 Junction and Storage Temperature Tstg ºC -40~+150
Electrostatic decontamination PCB rectifier board 150KV 220KV 250KV
150KV 15A 25nS 240*100*45 130KV 8A 75nS 240*100*45 70KV 8A 75nS/120nS 240*100*45
35KV
High voltage fast recovery rectifier diodes 2CL2FR : Peak reverse repetitive voltage: 35KV Average current: 60mA Max foward voltage: 52V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ7.5*22mm Trr: 100nS
20KV800mA 100nS
Peak reverse repetitive voltage: 20KV Average current: 800mA Max foward voltage: 50V Max forward surge current: 20A Leakage current: 5.0uA Dimension: φ4.5*15mm Trr: 100nS
Vrrm： 35KV If（AV）：100mA
Vrrm: 35KV If(AV): Ta=25℃ 60mA Ta=55℃ 100mA Ifsm: 10A Tstg: -55~+175℃ Vfm: 52V Trr: 100nS size: φ7.5*22mm
We will advance the high current drive of the developed device and aim for commercialization starting in the fiscal year 2021.
This technical document covers the "Ultra-Low Loss Gallium Oxide Schottky Barrier Diode." Our company has successfully reduced forward loss by up to 40% compared to commercially available SiC Schottky diodes. We are advancing the development of high-current drive devices, aiming for commercialization starting in the fiscal year 2021. We also introduce the "Gallium Oxide Trench MOSFET." [Contents] ■ Ultra-Low Loss Gallium Oxide Schottky Barrier Diode ■ Gallium Oxide Trench MOSFET *For more details, please refer to the PDF document or feel free to contact us.
Central Semiconductor Schottky Diode CMOSH-4E
The following four products from Centra Semiconductor are optimal devices for the "LiDAR" in autonomous driving systems and have been adopted by overseas LiDAR manufacturers.
Halogen-free compatible! Si photodiode suitable for mounting in compact optical units.
The "CP0174AL" is a photodiode capable of measuring light intensity from visible light to near-infrared light (400nm to 1000nm), including lasers and LEDs. The size of the light receiving area is 0.7mm x 0.7mm, and it is halogen-free compliant. With the adoption of a compact COB-2PIN package (2.2mm x 1.22mm), it is suitable for integration into small optical units such as pico projectors. 【Features】 ■ Sensitivity: 0.26A/W @ 405nm, 0.44A/W @ 700nm ■ Light receiving area size: 0.7mm x 0.7mm ■ Compact, thin package: 2.2mm x 1.22mm x 1.0mm COB-2PIN ■ Compatible with solder reflow ■ Lead-free compliant, RoHS compliant *For more details, please refer to the PDF document or feel free to contact us.
