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Photodiode Product List and Ranking from 14 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

Photodiode Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

  1. オプトロンサイエンス Tokyo//Optical Instruments
  2. 丸文 Tokyo//Trading company/Wholesale
  3. オー工ステンプ Kanagawa//Electronic Components and Semiconductors
  4. 4 null/null
  5. 4 コーデンシ Kyoto//Electronic Components and Semiconductors
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Photodiode Product ranking

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

  1. High-speed InGaAs photodiode オプトロンサイエンス
  2. Photodiode X100-7 (for semiconductor radiation detector) 丸文
  3. Germanium Photodiode (Ge Photodiode) オプトロンサイエンス
  4. 1000-2600nm photodiode "1000-2600" 【光通信機器/サイエンス/衛星　輸入商社】アイウェーヴ 東京本社
  5. 4 4-segment InGaAs photodiode オプトロンサイエンス

Photodiode Product List

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1000-2600nm photodiode "1000-2600"

1000-2600nm photodiode "1000-2600"

Optimal for gas sensing! A photodiode with a wavelength range of 1000-2660nm.

The 1000-2600nm photodiode "1000-2600" is a photodiode with a wavelength range of 1000-2660nm. The light receiving area is 1-3mm, and the package is TO-5. It is used for gas sensing. 【Features】 ■ Spectral response range: 1000-2600nm (typ) ■ Peak sensitivity wavelength: 1880nm (typ) ■ Responsivity: 0.9A/W (max) ■ Reverse voltage: 2V (max) ■ Dark current: 1.9mA *For more details, please download the catalog or contact us. *The catalog is available in English.

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InGaAs VIS/NIR photodiode

InGaAs VIS/NIR photodiode

GPD Corporation is a global company that manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.

■Aperture: 0.3mm to 5mm ■Wavelength: 0.5 to 1.7μm ■Linear operation ■Low dark current, high sensitivity ■Fiber pigtail (single mode/multi mode) ■Package: TO-46, TO-18, TO-5, TO-8

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Two-color sandwich photodiode

Two-color sandwich photodiode

Two-Color Sandwich PD

■On InGaAs: Si (1.7, 2.05, 2.2, 2.6μm) ■Effective diameter of the upper light receiving part: 2.0mm or 5.0mm ■Effective diameter of the lower light receiving part: 1mm, 2.0mm or 3.0mm ■On InGaAs (1.7, 2.05, 2.2, 2.6μm): InGaAs (1.7μm) ■Effective diameter of the lower light receiving part: 1mm or 2.0mm ■Standard package: TO-5, TO-8

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4-segment InGaAs photodiode

4-segment InGaAs photodiode

InGaAS Quadrant PD

■Wavelength range: 800nm to 1700nm ■Effective diameter: 0.5 / 1.0 / 1.5 / 2.0 / 3.0mm ■High sensitivity ■High shunt resistance ■Low dark current ■Low capacitance for high segment bandwidth ■Standard package: TO-5, TO-18

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Large-diameter InGaAs photodiode

Large-diameter InGaAs photodiode

Large Area InGaAs PD

■Aperture: 0.5mm to 5mm ■Cut-off wavelength: 1.7μm ■High-sensitivity shunt resistor ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Optical filters: density and bandpass filters ■Package: TO-46, TO-18, TO-5, TO-8

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GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (TO-46 Can/ROSA compatible) optimal for VCSEL optical communication.

■Supports up to 25Gbps ■Available in SC/LC receptacle compatible ROSA or TO46-CAN package ■With ball lens or dome lens / with TIA

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Si solderable chip photodiode

Si solderable chip photodiode

◆Sensitivity range: 400nm to 1100nm ◆Solderable chip photodiode ◆Solar cells, etc. ◆Photoconductive (solar cell) solderable chip

■Large effective diameter ■Abundant sizes ■High shunt resistance ■With leads or without leads Large active area photodetectors or detectors provide a low-cost approach for applications that require them to be considered "disposable." They can be used with soldered leads or as standalone bare dies. The sensitivity range is from 400nm to 1100nm.

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InGaAs high-speed photodiode

InGaAs high-speed photodiode

◆High-speed 70μm InGaAs photodetector◆Combining a sealed TIA and detector in a TO-46 package

The FCI-H155/622M-InGaAs-70 series is a high-speed 70μm InGaAs photodetector equipped with a wide-range transimpedance amplifier. By combining a sealed TIA and detector in a 4-pin TO-46 package, it provides ideal conditions for high-speed signal detection and amplification. 【Model Name: Active Area (Diameter)・Responsivity 1310nm・Responsivity 1550nm・Dark Current・Capacitance・Rise Time・Reverse Voltage】 ●FCI-InGaAs-70: 70 μm・0.9 A/W・0.95 A/W・0.03 nA, Vr=5.0V・1.5 pF, Vr=5.0V・0.2 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-120: 120 μm・0.9 A/W・0.95 A/W・0.05 nA, Vr=5.0V・2 pF, Vr=5.0V・0.3 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-300: 300 μm・0.9 A/W・0.95 A/W・0.3 nA, Vr=5.0V・10 pF, Vr=5.0V・1.5 ns, Vr=5.0V・15 V, max

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Nd-YAG optimized photodiode

Nd-YAG optimized photodiode

◆Nd:YAG sensitivity High voltage resistance ◆Large effective diameter ◆High-speed sensitivity ◆High precision ◆Low capacitance, low noise, and high-speed operation are possible

◆For position detection of YAG laser output light ◆Photodiode optimized for high sensitivity at 1060nm ◆Operates at a high reverse bias voltage (200 volts) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements for mass production.

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Ultraviolet + Visible Light Wavelength Photodiode

Ultraviolet + Visible Light Wavelength Photodiode

◆Package with quartz or ultraviolet-transmitting glass window ◆Increased performance at high speeds due to low dark current and low capacitance with reverse bias

◆Wavelength sensitivity ranges from 200nm to 1100nm Packaged with quartz or ultraviolet transmitting glass windows, these detectors have a wavelength sensitivity from 200nm to 1100nm. They can enhance performance at high speeds due to low dark current and low capacitance with reverse bias. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements of mass production.

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Si plastic capsule photodiode

Si plastic capsule photodiode

◆Plastic encapsulated photodiode ◆High quality, high reliability ◆High-density package ◆Robust molded package

- Low dark current - Standard lead - SMT - Molded lens - Sideways available - Filter on chip (700nm cutoff) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and over 30 years of experience. We continue to create efficient manufacturing and excellent engineering solutions to meet the requirements of mass production. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience and efficient manufacturing know-how developed to meet the requirements of mass production, we provide products that excel in reliability and cost performance.

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GaAs photodiode OSI optoelectronics

GaAs photodiode OSI optoelectronics

◆GaAs photodiode ◆Semiconductor optical sensor based on GaAs ◆Sensitive from 400 to 850 nm

This is a semiconductor optical sensor based on GaAs that generates photocurrent when incident light enters the active area. It generally has sensitivity from 400 to 850 nm. 【Photodiode Array】 FCI-GaAs-XXm is a GaAs PIN photodetector array designed for high-speed fiber receivers and application monitors, consisting of 4 to 12 elements. ● Specifications [Model Name: Active Area, Responsivity, Capacitance, Dark Current, Maximum Reverse Voltage, Maximum Forward Current, Bandwidth, Breakdown Voltage, Package] - FCI-GaAS-4M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-4M - FCI-GaAS-12M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-12M

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Photodiode X100-7 (for semiconductor radiation detector)

Photodiode X100-7 (for semiconductor radiation detector)

This product is a photodiode for detecting gamma and beta radiation developed by FirstSensor in Germany.

This product is a photodiode for detecting gamma and beta radiation developed by First Sensor in Germany. It has a large light-receiving area of 10 x 10 mm, and the surface is coated with black epoxy to enhance sensitivity and reduce noise. Both pin-type and SMD-type versions are available, suitable for both experiments and mass production.

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OPTO DIODE Corporation Si photodiode for XUV-UV detection

OPTO DIODE Corporation Si photodiode for XUV-UV detection

The internal quantum efficiency in the soft X-ray to UV region is nearly 100%.

OPTO DIODE (formerly IRD) has developed a Si photodiode with an internal quantum efficiency of nearly 100% in the soft X-ray to UV range in collaboration with research institutions such as NIST and LLNL. This compact and easy-to-handle Si photodiode is expected to be useful not only in high-energy light research but also in the fields of electrons and ions.

  • Optical Measuring Instruments
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Silicon photodiode KD834

Silicon photodiode KD834

The silicon photodiode chip has been integrated into a metal package!

The Silicon Photodiode KD834 is a photodiode that incorporates a planar type silicon photodiode chip into a metal package. It uses a high-sensitivity photodiode (λp: 900nm) and has high performance and reliability in a TO-18 metal package. RoHS-compliant versions are also available. It is suitable for applications such as light-receiving elements for photo sensors and light-receiving elements for photoelectric switches. For more details, please contact us or refer to the catalog.

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