Ultra-low-capacity photodiode

No need for electromagnetic shielding outside! Successfully reduced the capacity of the photodiode to less than a fraction and achieved wideband expansion.

The light-receiving system experiences a decrease in sensitivity when broadened in bandwidth, and high-sensitivity light-receiving ICs have the issue of being easily affected by external noise. We have successfully developed a new type of light-receiving element that addresses these challenges, resulting in a light-receiving IC that is both broadband and high-sensitivity while being less susceptible to external noise. Our new photodiode achieves broadband capability through an ultra-low capacitance that is less than a fraction of the limits of conventional technology, thanks to its unique structure. It can incorporate a shielding effect internally, eliminating the need for external electromagnetic shielding. 【Features】 ■ High sensitivity in a broad bandwidth ■ Parasitic capacitance is less than a fraction compared to conventional photodiodes ■ Light-receiving element unaffected by external noise *For more details, please refer to the PDF document or feel free to contact us.

diodeOther semiconductors