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Photodiode Product List and Ranking from 17 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

Photodiode Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

  1. オプトロンサイエンス Tokyo//Optical Instruments
  2. 丸文 Tokyo//Trading company/Wholesale
  3. 光響 Kyoto//Optical Instruments
  4. ケイエルブイ Tokyo//Testing, Analysis and Measurement
  5. 5 コーデンシ Kyoto//Electronic Components and Semiconductors
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Photodiode Product ranking

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

  1. InGaAs high-speed photodiode オプトロンサイエンス
  2. Photodiode X100-7 (for semiconductor radiation detector) 丸文
  3. QPhotonics manufactured InGaAs PIN photodiode 光響
  4. High-speed InGaAs photodiode オプトロンサイエンス
  5. 1000-2600nm photodiode "1000-2600" 【光通信機器/サイエンス/衛星　輸入商社】アイウェーヴ 東京本社

Photodiode Product List

16～30 item / All 44 items

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QPhotonics manufactured InGaAs PIN photodiode

QPhotonics manufactured InGaAs PIN photodiode

We offer products in the wavelength ranges of 630-1650nm, 800-1650nm, and 1000-1650nm!

We would like to introduce the "InGaAs PIN Photodiode" that we handle. The products in the 630-1650nm range include the QSPDI-25 miniature integrating sphere module, with a receptacle included (FC, ST, SC, U1.25 or U2.5 adapter). Additionally, the products in the 800-1650nm range include a 2-3GHz coaxial mount photodiode, with modules compatible with FC, ST, SC, U1.25 or U2.5 adapters. 【Product Lineup (Partial)】 ■630-1650nm ・QSPDI-25 miniature integrating sphere module, with receptacle included 　(FC, ST, SC, U1.25 or U2.5 adapter) ■800-1650nm ・2-3GHz coaxial mount photodiode ・Modules compatible with FC, ST, SC, U1.25 or U2.5 adapters *For more details, please download the PDF or feel free to contact us.

  • InGaAs PIN フォトダイオード2.jpg
  • diode

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Pin photodiode chip / chip-on-submount type

Pin photodiode chip / chip-on-submount type

Wavelength is 1300 to 1600 nm! Usable for measurement instruments, data communications, FTTH, and other applications.

This product is a photodiode that uses InGaAs material grown on an InP substrate by MOCVD (Metal Organic Vapor Deposition). It is a front-illuminated type that supports a wide operating wavelength range from 1300nm to 1600nm and can be easily mounted on a submount. Please feel free to contact us when you need assistance. 【Features】 ■ InGaAs material ■ Planar Zn diffusion structure ■ Light receiving area with a diameter of 70μm ■ Front-illuminated photodiode ■ High responsiveness (0.85 A/W over a wide range (1300nm to 1600nm)) *For more details, please download the PDF (English version) or feel free to contact us.

  • Laser Components

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Photodiode

Photodiode

Photodiode

A photodiode is a device used to detect ultra-fast optical events. It generates an electrical output when exposed to light, operates without internal gain, and functions over a wide dynamic range. The rise time of PHOTEK photodiodes is less than 100 ps, and you can choose from photonic input surfaces with diameters of 10 mm, 25 mm, or 40 mm.

  • Other physicochemical equipment
  • Image Processing Equipment
  • Other image-related equipment

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Silicon photodiode

Silicon photodiode

Silicon photodiode

The OSPD50 series is a large-area general-purpose Si PIN photodiode with excellent sensitivity and fast response. It achieves a terminal capacitance of 6pF and a cutoff frequency of over 25MHz. The active area is available in three standard sizes: 0.8mm x 0.8mm, 1.2mm x 1.2mm, and 2.0mm x 2.0mm, with a compact plastic package size of 4 x 4.8 x 1.8mm. The spectral sensitivity characteristics include three types: for visible to infrared range (λ=320nm~1100nm), for infrared range (λ=760nm~1100nm), and a special sensitivity wavelength range of λ=600nm~720nm. It is also compatible with lead-forming types that enable miniaturization of the mounting area. We offer attractive low prices and short delivery times.

  • Other semiconductors
  • Other optical parts
  • diode

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650nm Pin Photodiode

650nm Pin Photodiode

650nm Pin Photo Diode with an active area of 3.6 mm²

This is a large-area general-purpose Si PIN photodiode with excellent high sensitivity and fast response. The active area is standard at 1.9mm x 1.9mm. The package size is compact at 5.2 x 4.8 x 1.43mm. We also consider customization to meet your specific requirements. Please feel free to contact us.

  • Other semiconductors
  • Other optical parts
  • diode

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Black silicon photodiode

Black silicon photodiode

A photodiode with very high sensitivity over a wide wavelength range from 200nm to 950nm.

ElFys' black silicon photodiode is a photodiode that enhances light collection through surface nanostructure technology combined with atomic layer deposition (ALD) coating, allowing for high sensitivity in detecting light over a wide wavelength range. It has an external quantum efficiency of over 96% in the wavelength range of 200nm to 950nm. Particularly in the ultraviolet (UV) region, it exhibits very high sensitivity, with approximately twice the optical responsiveness compared to conventional pn junction photodiodes.

  • Other optical parts

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Black Silicon Photodiode ElFys SM

Black Silicon Photodiode ElFys SM

Ultra-high sensitivity SMD package suitable for wearable devices - Black silicon photodiode

The ElFys SM series is a black silicon photodiode in an SMD package that excels in visible and near-infrared light detection performance. ■ Ultra High Sensitivity With ultra high sensitivity, it outputs more photocurrent, improving the energy efficiency of PPG (photoplethysmography) modules. ■ SMD Compact Package The "compact package" and "high light-receiving area fill factor" enable the design of innovative wearable products. It is particularly suitable for health monitoring applications in wearable devices.

  • Other optical parts

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High-speed photodiode compatible with blue-violet laser PDZ702NB

High-speed photodiode compatible with blue-violet laser PDZ702NB

Achieving high sensitivity and fast response simultaneously! High-speed photodiode compatible with blue-violet lasers.

At Corden, we have developed a new silicon photodetector using our unique technology. This newly developed photodetector achieves both high sensitivity and fast response simultaneously, and it also has high stability against blue-violet laser light. It is being mass-produced as the blue-violet compatible high-speed diode "PDZ702NB."

  • Other semiconductors
  • Other optical parts
  • diode

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Ultra-low-capacity photodiode

Ultra-low-capacity photodiode

No need for electromagnetic shielding outside! Successfully reduced the capacity of the photodiode to less than a fraction and achieved wideband expansion.

The light-receiving system experiences a decrease in sensitivity when broadened in bandwidth, and high-sensitivity light-receiving ICs have the issue of being easily affected by external noise. We have successfully developed a new type of light-receiving element that addresses these challenges, resulting in a light-receiving IC that is both broadband and high-sensitivity while being less susceptible to external noise. Our new photodiode achieves broadband capability through an ultra-low capacitance that is less than a fraction of the limits of conventional technology, thanks to its unique structure. It can incorporate a shielding effect internally, eliminating the need for external electromagnetic shielding. 【Features】 ■ High sensitivity in a broad bandwidth ■ Parasitic capacitance is less than a fraction compared to conventional photodiodes ■ Light-receiving element unaffected by external noise *For more details, please refer to the PDF document or feel free to contact us.

  • Other semiconductors
  • diode

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Low polarization-dependent loss InGaAs photodiode

Low polarization-dependent loss InGaAs photodiode

Low PDL InGaAs Photodiode

■Effective diameter: 0.3 to 5mm ■High sensitivity ■Cut-off frequency (1.7um) ■Low polarization dependent loss (Low PDL) ■Connector compatible (FC, SC, ST, SMA)

  • Other optical parts
  • Sensors

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Linear Array Photodiode

Linear Array Photodiode

Elements 4, 8, 12, and 16 are arranged as a linear array.

■Design with a 250um pitch to match fiber ribbons ■High-speed and low dark current support with an effective diameter of 80um ■Optical isolation of 50dB ■Compatible with O, S, C, and L bands

  • Other optical parts
  • Sensors

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InGaAs electronic cooling photodiode

InGaAs electronic cooling photodiode

InGaAs Thermoelectric Cooled PD

■Single/Dual Stage TE Cooler ■Effective diameter: 0.3mm to 5mm ■High shunt resistance ■Low dark current / low leakage current ■High sensitivity ■Cut-off wavelengths: 1.7, 1.9, 2.05, 2.2, 2.6μm ■Standard package: TO-5, TO-8, TO-66 ■Custom package with fiber pigtail and SMA receptacle

  • Other optical parts
  • Sensors

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Near-infrared wideband InGaAs photodiode

Near-infrared wideband InGaAs photodiode

Extended InGaAs PD

■Aperture: 0.3mm to 3mm ■Cut-off wavelengths: 1.9μm, 2.05μm, 2.2μm, 2.6μm ■High shunt resistance ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Package: TO-46, TO-18, TO-5

  • Other optical parts
  • Sensors

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Germanium Photodiode (Ge Photodiode)

Germanium Photodiode (Ge Photodiode)

GPD Corporation manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.

■Various sizes from small to large diameter: 100μm to 25mm ■Wavelength sensitivity range: 800nm to 1800nm ■High linearity: >10dBm ■Various lens options available: biconvex lenses, plano-convex lenses, and ball lenses ■Optical filters: density filters and bandpass filters ■Single and dual-stage electronic cooling available ■4-segment photodiode ■Dual-color (Si/Ge) sandwich photodiode ■Custom accessory packaging available: fiber pigtails, high-reliability pigtails, receptacles, and submounts ■Various packages: TO-46, TO-18, TO-5, TO-8, TO-9, BNC

  • Other optical parts
  • Sensors

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Si photodiode (TO package) (Si PD)

Si photodiode (TO package) (Si PD)

◆Driven under reverse bias conditions ◆Large diameter, square shapes also available ◆Low dark current ◆Silicon PIN photodiode ◆Peak wavelength approximately 940nm

■Spectral detection range: 400nm to 1100nm LD-PD has implemented an inspection system compliant with MIL-I-45208, and adheres to Telcordia test requirements (TA-NWT-00093) and MIL-STD-883 test methods. 【Parameters: Typical values, Symbols, Test conditions】 ● Round shape φ0.2 to φ8.0mm Detector size (mm): φ0.2, φ0.5, φ1, φ2, φ4, φ5, φ8 Response wavelength range (nm): 400 – 1100・λ Responsivity (A/W): 0.40, 0.45, 0.5, 0.5, 0.5, 0.5, 0.55・Re・VR=15V, λ=900nm Response time (nS): 2, 5, 6, 8, 15, 15, 25tr・VR=15V, RL=50Ω Dark current (nA): 1, 2, 3, 5, 12, 40, 60・ID・VR=15V Reverse voltage (V): 100・VB・IR=10μA Capacitance (pF): 0.8, 1.2, 2.0, 6, 20, 30, 70・Cj・f=1MHz, VR=15V Operating voltage (V): 0 to 15・VR Socket: Coaxial/TO-46/TO-5/TO-8 Saturation optical power: 0.3w/cm2

  • Other optical parts
  • Other physicochemical equipment
  • Other measurement, recording and measuring instruments

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