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Photodiode Product List and Ranking from 17 Manufacturers, Suppliers and Companies

Last Updated: Aggregation Period:Dec 17, 2025~Jan 13, 2026
This ranking is based on the number of page views on our site.

Photodiode Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Dec 17, 2025~Jan 13, 2026
This ranking is based on the number of page views on our site.

  1. オプトロンサイエンス Tokyo//Optical Instruments
  2. コーデンシ Kyoto//Electronic Components and Semiconductors
  3. 丸文 Tokyo//Trading company/Wholesale
  4. 4 デクセリアルズ Tochigi//Electronic Components and Semiconductors
  5. 5 null/null

Photodiode Product ranking

Last Updated: Aggregation Period:Dec 17, 2025~Jan 13, 2026
This ranking is based on the number of page views on our site.

  1. High-speed photodiode compatible with blue-violet laser PDZ702NB コーデンシ
  2. Si plastic capsule photodiode オプトロンサイエンス
  3. Photodiode X100-7 (for semiconductor radiation detector) 丸文
  4. Two-color sandwich photodiode オプトロンサイエンス
  5. 4 4-segment InGaAs photodiode オプトロンサイエンス

Photodiode Product List

16~30 item / All 46 items

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Silicon photodiode KD834

The silicon photodiode chip has been integrated into a metal package!

The Silicon Photodiode KD834 is a photodiode that incorporates a planar type silicon photodiode chip into a metal package. It uses a high-sensitivity photodiode (λp: 900nm) and has high performance and reliability in a TO-18 metal package. RoHS-compliant versions are also available. It is suitable for applications such as light-receiving elements for photo sensors and light-receiving elements for photoelectric switches. For more details, please contact us or refer to the catalog.

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Semiconductor PIN photodiode

Optical communication photodiode

At Optotech, we are committed to designing and manufacturing custom-made semiconductors to meet the various needs that arise from the increasing functionality and complexity of sensors. Please feel free to consult us about semiconductor miniaturization, weight reduction, and high density. We handle everything from discussing the specifications of prototypes to mass production as a total system, which can lead to further cost reductions in manufacturing expenses, such as labor costs and component purchasing and management fees.

  • Other semiconductors

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QPhotonics manufactured InGaAs PIN photodiode

We offer products in the wavelength ranges of 630-1650nm, 800-1650nm, and 1000-1650nm!

We would like to introduce the "InGaAs PIN Photodiode" that we handle. The products in the 630-1650nm range include the QSPDI-25 miniature integrating sphere module, with a receptacle included (FC, ST, SC, U1.25 or U2.5 adapter). Additionally, the products in the 800-1650nm range include a 2-3GHz coaxial mount photodiode, with modules compatible with FC, ST, SC, U1.25 or U2.5 adapters. 【Product Lineup (Partial)】 ■630-1650nm ・QSPDI-25 miniature integrating sphere module, with receptacle included  (FC, ST, SC, U1.25 or U2.5 adapter) ■800-1650nm ・2-3GHz coaxial mount photodiode ・Modules compatible with FC, ST, SC, U1.25 or U2.5 adapters *For more details, please download the PDF or feel free to contact us.

  • InGaAs PIN フォトダイオード2.jpg
  • diode

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Pin photodiode chip / chip-on-submount type

Wavelength is 1300 to 1600 nm! Usable for measurement instruments, data communications, FTTH, and other applications.

This product is a photodiode that uses InGaAs material grown on an InP substrate by MOCVD (Metal Organic Vapor Deposition). It is a front-illuminated type that supports a wide operating wavelength range from 1300nm to 1600nm and can be easily mounted on a submount. Please feel free to contact us when you need assistance. 【Features】 ■ InGaAs material ■ Planar Zn diffusion structure ■ Light receiving area with a diameter of 70μm ■ Front-illuminated photodiode ■ High responsiveness (0.85 A/W over a wide range (1300nm to 1600nm)) *For more details, please download the PDF (English version) or feel free to contact us.

  • Laser Components

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Photodiode

Photodiode

A photodiode is a device used to detect ultra-fast optical events. It generates an electrical output when exposed to light, operates without internal gain, and functions over a wide dynamic range. The rise time of PHOTEK photodiodes is less than 100 ps, and you can choose from photonic input surfaces with diameters of 10 mm, 25 mm, or 40 mm.

  • Other physicochemical equipment
  • Image Processing Equipment
  • Other image-related equipment

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Silicon photodiode

Silicon photodiode

The OSPD50 series is a large-area general-purpose Si PIN photodiode with excellent sensitivity and fast response. It achieves a terminal capacitance of 6pF and a cutoff frequency of over 25MHz. The active area is available in three standard sizes: 0.8mm x 0.8mm, 1.2mm x 1.2mm, and 2.0mm x 2.0mm, with a compact plastic package size of 4 x 4.8 x 1.8mm. The spectral sensitivity characteristics include three types: for visible to infrared range (λ=320nm~1100nm), for infrared range (λ=760nm~1100nm), and a special sensitivity wavelength range of λ=600nm~720nm. It is also compatible with lead-forming types that enable miniaturization of the mounting area. We offer attractive low prices and short delivery times.

  • Other semiconductors
  • Other optical parts
  • diode

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650nm Pin Photodiode

650nm Pin Photo Diode with an active area of 3.6 mm²

This is a large-area general-purpose Si PIN photodiode with excellent high sensitivity and fast response. The active area is standard at 1.9mm x 1.9mm. The package size is compact at 5.2 x 4.8 x 1.43mm. We also consider customization to meet your specific requirements. Please feel free to contact us.

  • Other semiconductors
  • Other optical parts
  • diode

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Black silicon photodiode

A photodiode with very high sensitivity over a wide wavelength range from 200nm to 950nm.

ElFys' black silicon photodiode is a photodiode that enhances light collection through surface nanostructure technology combined with atomic layer deposition (ALD) coating, allowing for high sensitivity in detecting light over a wide wavelength range. It has an external quantum efficiency of over 96% in the wavelength range of 200nm to 950nm. Particularly in the ultraviolet (UV) region, it exhibits very high sensitivity, with approximately twice the optical responsiveness compared to conventional pn junction photodiodes.

  • Other optical parts

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Black Silicon Photodiode ElFys SM

Ultra-high sensitivity SMD package suitable for wearable devices - Black silicon photodiode

The ElFys SM series is a black silicon photodiode in an SMD package that excels in visible and near-infrared light detection performance. ■ Ultra High Sensitivity With ultra high sensitivity, it outputs more photocurrent, improving the energy efficiency of PPG (photoplethysmography) modules. ■ SMD Compact Package The "compact package" and "high light-receiving area fill factor" enable the design of innovative wearable products. It is particularly suitable for health monitoring applications in wearable devices.

  • Other optical parts

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High-speed photodiode compatible with blue-violet laser PDZ702NB

Achieving high sensitivity and fast response simultaneously! High-speed photodiode compatible with blue-violet lasers.

At Corden, we have developed a new silicon photodetector using our unique technology. This newly developed photodetector achieves both high sensitivity and fast response simultaneously, and it also has high stability against blue-violet laser light. It is being mass-produced as the blue-violet compatible high-speed diode "PDZ702NB."

  • Other semiconductors
  • Other optical parts
  • diode

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Ultra-low-capacity photodiode

No need for electromagnetic shielding outside! Successfully reduced the capacity of the photodiode to less than a fraction and achieved wideband expansion.

The light-receiving system experiences a decrease in sensitivity when broadened in bandwidth, and high-sensitivity light-receiving ICs have the issue of being easily affected by external noise. We have successfully developed a new type of light-receiving element that addresses these challenges, resulting in a light-receiving IC that is both broadband and high-sensitivity while being less susceptible to external noise. Our new photodiode achieves broadband capability through an ultra-low capacitance that is less than a fraction of the limits of conventional technology, thanks to its unique structure. It can incorporate a shielding effect internally, eliminating the need for external electromagnetic shielding. 【Features】 ■ High sensitivity in a broad bandwidth ■ Parasitic capacitance is less than a fraction compared to conventional photodiodes ■ Light-receiving element unaffected by external noise *For more details, please refer to the PDF document or feel free to contact us.

  • Other semiconductors
  • diode

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Low polarization-dependent loss InGaAs photodiode

Low PDL InGaAs Photodiode

■Effective diameter: 0.3 to 5mm ■High sensitivity ■Cut-off frequency (1.7um) ■Low polarization dependent loss (Low PDL) ■Connector compatible (FC, SC, ST, SMA)

  • Other optical parts
  • Sensors

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Linear Array Photodiode

Elements 4, 8, 12, and 16 are arranged as a linear array.

■Design with a 250um pitch to match fiber ribbons ■High-speed and low dark current support with an effective diameter of 80um ■Optical isolation of 50dB ■Compatible with O, S, C, and L bands

  • Other optical parts
  • Sensors

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InGaAs electronic cooling photodiode

InGaAs Thermoelectric Cooled PD

■Single/Dual Stage TE Cooler ■Effective diameter: 0.3mm to 5mm ■High shunt resistance ■Low dark current / low leakage current ■High sensitivity ■Cut-off wavelengths: 1.7, 1.9, 2.05, 2.2, 2.6μm ■Standard package: TO-5, TO-8, TO-66 ■Custom package with fiber pigtail and SMA receptacle

  • Other optical parts
  • Sensors

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Near-infrared wideband InGaAs photodiode

Extended InGaAs PD

■Aperture: 0.3mm to 3mm ■Cut-off wavelengths: 1.9μm, 2.05μm, 2.2μm, 2.6μm ■High shunt resistance ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Package: TO-46, TO-18, TO-5

  • Other optical parts
  • Sensors

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