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Photodiode Product List and Ranking from 17 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.

Photodiode Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.

  1. オプトロンサイエンス Tokyo//Optical Instruments
  2. 丸文 Tokyo//Trading company/Wholesale
  3. ケイエルブイ Tokyo//Testing, Analysis and Measurement
  4. 4 null/null
  5. 5 オー工ステンプ Kanagawa//Electronic Components and Semiconductors
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Photodiode Product ranking

Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.

  1. Photodiode X100-7 (for semiconductor radiation detector) 丸文
  2. Black silicon photodiode ケイエルブイ
  3. Two-color sandwich photodiode オプトロンサイエンス
  4. 4-segment InGaAs photodiode オプトロンサイエンス
  5. 4 Photodetector and Optocoupler Photodiode Lineup List

Photodiode Product List

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1000-2600nm photodiode "1000-2600"

1000-2600nm photodiode "1000-2600"

Optimal for gas sensing! A photodiode with a wavelength range of 1000-2660nm.

The 1000-2600nm photodiode "1000-2600" is a photodiode with a wavelength range of 1000-2660nm. The light receiving area is 1-3mm, and the package is TO-5. It is used for gas sensing. 【Features】 ■ Spectral response range: 1000-2600nm (typ) ■ Peak sensitivity wavelength: 1880nm (typ) ■ Responsivity: 0.9A/W (max) ■ Reverse voltage: 2V (max) ■ Dark current: 1.9mA *For more details, please download the catalog or contact us. *The catalog is available in English.

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InGaAs VIS/NIR photodiode

InGaAs VIS/NIR photodiode

GPD Corporation is a global company that manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.

■Aperture: 0.3mm to 5mm ■Wavelength: 0.5 to 1.7μm ■Linear operation ■Low dark current, high sensitivity ■Fiber pigtail (single mode/multi mode) ■Package: TO-46, TO-18, TO-5, TO-8

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Two-color sandwich photodiode

Two-color sandwich photodiode

Two-Color Sandwich PD

■On InGaAs: Si (1.7, 2.05, 2.2, 2.6μm) ■Effective diameter of the upper light receiving part: 2.0mm or 5.0mm ■Effective diameter of the lower light receiving part: 1mm, 2.0mm or 3.0mm ■On InGaAs (1.7, 2.05, 2.2, 2.6μm): InGaAs (1.7μm) ■Effective diameter of the lower light receiving part: 1mm or 2.0mm ■Standard package: TO-5, TO-8

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4-segment InGaAs photodiode

4-segment InGaAs photodiode

InGaAS Quadrant PD

■Wavelength range: 800nm to 1700nm ■Effective diameter: 0.5 / 1.0 / 1.5 / 2.0 / 3.0mm ■High sensitivity ■High shunt resistance ■Low dark current ■Low capacitance for high segment bandwidth ■Standard package: TO-5, TO-18

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Large-diameter InGaAs photodiode

Large-diameter InGaAs photodiode

Large Area InGaAs PD

■Aperture: 0.5mm to 5mm ■Cut-off wavelength: 1.7μm ■High-sensitivity shunt resistor ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Optical filters: density and bandpass filters ■Package: TO-46, TO-18, TO-5, TO-8

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GaAs PIN photodiode PIN-PD bare chip

GaAs PIN photodiode PIN-PD bare chip

GaAs PIN photodiode optimal for VCSEL optical communication.

■Supports up to 25Gbps ■Single chip / array chip (1×4 / 1×12)

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GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (TO-46 Can/ROSA compatible) optimal for VCSEL optical communication.

■Supports up to 25Gbps ■Available in SC/LC receptacle compatible ROSA or TO46-CAN package ■With ball lens or dome lens / with TIA

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Si solderable chip photodiode

Si solderable chip photodiode

◆Sensitivity range: 400nm to 1100nm ◆Solderable chip photodiode ◆Solar cells, etc. ◆Photoconductive (solar cell) solderable chip

■Large effective diameter ■Abundant sizes ■High shunt resistance ■With leads or without leads Large active area photodetectors or detectors provide a low-cost approach for applications that require them to be considered "disposable." They can be used with soldered leads or as standalone bare dies. The sensitivity range is from 400nm to 1100nm.

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InGaAs high-speed photodiode

InGaAs high-speed photodiode

◆High-speed 70μm InGaAs photodetector◆Combining a sealed TIA and detector in a TO-46 package

The FCI-H155/622M-InGaAs-70 series is a high-speed 70μm InGaAs photodetector equipped with a wide-range transimpedance amplifier. By combining a sealed TIA and detector in a 4-pin TO-46 package, it provides ideal conditions for high-speed signal detection and amplification. 【Model Name: Active Area (Diameter)・Responsivity 1310nm・Responsivity 1550nm・Dark Current・Capacitance・Rise Time・Reverse Voltage】 ●FCI-InGaAs-70: 70 μm・0.9 A/W・0.95 A/W・0.03 nA, Vr=5.0V・1.5 pF, Vr=5.0V・0.2 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-120: 120 μm・0.9 A/W・0.95 A/W・0.05 nA, Vr=5.0V・2 pF, Vr=5.0V・0.3 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-300: 300 μm・0.9 A/W・0.95 A/W・0.3 nA, Vr=5.0V・10 pF, Vr=5.0V・1.5 ns, Vr=5.0V・15 V, max

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Nd-YAG optimized photodiode

Nd-YAG optimized photodiode

◆Nd:YAG sensitivity High voltage resistance ◆Large effective diameter ◆High-speed sensitivity ◆High precision ◆Low capacitance, low noise, and high-speed operation are possible

◆For position detection of YAG laser output light ◆Photodiode optimized for high sensitivity at 1060nm ◆Operates at a high reverse bias voltage (200 volts) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements for mass production.

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Ultraviolet + Visible Light Wavelength Photodiode

Ultraviolet + Visible Light Wavelength Photodiode

◆Package with quartz or ultraviolet-transmitting glass window ◆Increased performance at high speeds due to low dark current and low capacitance with reverse bias

◆Wavelength sensitivity ranges from 200nm to 1100nm Packaged with quartz or ultraviolet transmitting glass windows, these detectors have a wavelength sensitivity from 200nm to 1100nm. They can enhance performance at high speeds due to low dark current and low capacitance with reverse bias. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements of mass production.

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Si plastic capsule photodiode

Si plastic capsule photodiode

◆Plastic encapsulated photodiode ◆High quality, high reliability ◆High-density package ◆Robust molded package

- Low dark current - Standard lead - SMT - Molded lens - Sideways available - Filter on chip (700nm cutoff) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and over 30 years of experience. We continue to create efficient manufacturing and excellent engineering solutions to meet the requirements of mass production. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience and efficient manufacturing know-how developed to meet the requirements of mass production, we provide products that excel in reliability and cost performance.

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Photodiode X100-7 (for semiconductor radiation detector)

Photodiode X100-7 (for semiconductor radiation detector)

This product is a photodiode for detecting gamma and beta radiation developed by FirstSensor in Germany.

This product is a photodiode for detecting gamma and beta radiation developed by First Sensor in Germany. It has a large light-receiving area of 10 x 10 mm, and the surface is coated with black epoxy to enhance sensitivity and reduce noise. Both pin-type and SMD-type versions are available, suitable for both experiments and mass production.

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OPTO DIODE Corporation Si photodiode for XUV-UV detection

OPTO DIODE Corporation Si photodiode for XUV-UV detection

The internal quantum efficiency in the soft X-ray to UV region is nearly 100%.

OPTO DIODE (formerly IRD) has developed a Si photodiode with an internal quantum efficiency of nearly 100% in the soft X-ray to UV range in collaboration with research institutions such as NIST and LLNL. This compact and easy-to-handle Si photodiode is expected to be useful not only in high-energy light research but also in the fields of electrons and ions.

  • Optical Measuring Instruments
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Silicon photodiode KD834

Silicon photodiode KD834

The silicon photodiode chip has been integrated into a metal package!

The Silicon Photodiode KD834 is a photodiode that incorporates a planar type silicon photodiode chip into a metal package. It uses a high-sensitivity photodiode (λp: 900nm) and has high performance and reliability in a TO-18 metal package. RoHS-compliant versions are also available. It is suitable for applications such as light-receiving elements for photo sensors and light-receiving elements for photoelectric switches. For more details, please contact us or refer to the catalog.

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Semiconductor PIN photodiode

Semiconductor PIN photodiode

Optical communication photodiode

At Optotech, we are committed to designing and manufacturing custom-made semiconductors to meet the various needs that arise from the increasing functionality and complexity of sensors. Please feel free to consult us about semiconductor miniaturization, weight reduction, and high density. We handle everything from discussing the specifications of prototypes to mass production as a total system, which can lead to further cost reductions in manufacturing expenses, such as labor costs and component purchasing and management fees.

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QPhotonics manufactured InGaAs PIN photodiode

QPhotonics manufactured InGaAs PIN photodiode

We offer products in the wavelength ranges of 630-1650nm, 800-1650nm, and 1000-1650nm!

We would like to introduce the "InGaAs PIN Photodiode" that we handle. The products in the 630-1650nm range include the QSPDI-25 miniature integrating sphere module, with a receptacle included (FC, ST, SC, U1.25 or U2.5 adapter). Additionally, the products in the 800-1650nm range include a 2-3GHz coaxial mount photodiode, with modules compatible with FC, ST, SC, U1.25 or U2.5 adapters. 【Product Lineup (Partial)】 ■630-1650nm ・QSPDI-25 miniature integrating sphere module, with receptacle included 　(FC, ST, SC, U1.25 or U2.5 adapter) ■800-1650nm ・2-3GHz coaxial mount photodiode ・Modules compatible with FC, ST, SC, U1.25 or U2.5 adapters *For more details, please download the PDF or feel free to contact us.

  • InGaAs PIN フォトダイオード2.jpg
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Pin photodiode chip / chip-on-submount type

Pin photodiode chip / chip-on-submount type

Wavelength is 1300 to 1600 nm! Usable for measurement instruments, data communications, FTTH, and other applications.

This product is a photodiode that uses InGaAs material grown on an InP substrate by MOCVD (Metal Organic Vapor Deposition). It is a front-illuminated type that supports a wide operating wavelength range from 1300nm to 1600nm and can be easily mounted on a submount. Please feel free to contact us when you need assistance. 【Features】 ■ InGaAs material ■ Planar Zn diffusion structure ■ Light receiving area with a diameter of 70μm ■ Front-illuminated photodiode ■ High responsiveness (0.85 A/W over a wide range (1300nm to 1600nm)) *For more details, please download the PDF (English version) or feel free to contact us.

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Photodiode

Photodiode

Photodiode

A photodiode is a device used to detect ultra-fast optical events. It generates an electrical output when exposed to light, operates without internal gain, and functions over a wide dynamic range. The rise time of PHOTEK photodiodes is less than 100 ps, and you can choose from photonic input surfaces with diameters of 10 mm, 25 mm, or 40 mm.

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Silicon photodiode

Silicon photodiode

Silicon photodiode

The OSPD50 series is a large-area general-purpose Si PIN photodiode with excellent sensitivity and fast response. It achieves a terminal capacitance of 6pF and a cutoff frequency of over 25MHz. The active area is available in three standard sizes: 0.8mm x 0.8mm, 1.2mm x 1.2mm, and 2.0mm x 2.0mm, with a compact plastic package size of 4 x 4.8 x 1.8mm. The spectral sensitivity characteristics include three types: for visible to infrared range (λ=320nm~1100nm), for infrared range (λ=760nm~1100nm), and a special sensitivity wavelength range of λ=600nm~720nm. It is also compatible with lead-forming types that enable miniaturization of the mounting area. We offer attractive low prices and short delivery times.

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650nm Pin Photodiode

650nm Pin Photodiode

650nm Pin Photo Diode with an active area of 3.6 mm²

This is a large-area general-purpose Si PIN photodiode with excellent high sensitivity and fast response. The active area is standard at 1.9mm x 1.9mm. The package size is compact at 5.2 x 4.8 x 1.43mm. We also consider customization to meet your specific requirements. Please feel free to contact us.

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Black silicon photodiode

Black silicon photodiode

A photodiode with very high sensitivity over a wide wavelength range from 200nm to 950nm.

ElFys' black silicon photodiode is a photodiode that enhances light collection through surface nanostructure technology combined with atomic layer deposition (ALD) coating, allowing for high sensitivity in detecting light over a wide wavelength range. It has an external quantum efficiency of over 96% in the wavelength range of 200nm to 950nm. Particularly in the ultraviolet (UV) region, it exhibits very high sensitivity, with approximately twice the optical responsiveness compared to conventional pn junction photodiodes.

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Black Silicon Photodiode ElFys SM

Black Silicon Photodiode ElFys SM

Ultra-high sensitivity SMD package suitable for wearable devices - Black silicon photodiode

The ElFys SM series is a black silicon photodiode in an SMD package that excels in visible and near-infrared light detection performance. ■ Ultra High Sensitivity With ultra high sensitivity, it outputs more photocurrent, improving the energy efficiency of PPG (photoplethysmography) modules. ■ SMD Compact Package The "compact package" and "high light-receiving area fill factor" enable the design of innovative wearable products. It is particularly suitable for health monitoring applications in wearable devices.

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High-speed photodiode compatible with blue-violet laser PDZ702NB

High-speed photodiode compatible with blue-violet laser PDZ702NB

Achieving high sensitivity and fast response simultaneously! High-speed photodiode compatible with blue-violet lasers.

At Corden, we have developed a new silicon photodetector using our unique technology. This newly developed photodetector achieves both high sensitivity and fast response simultaneously, and it also has high stability against blue-violet laser light. It is being mass-produced as the blue-violet compatible high-speed diode "PDZ702NB."

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Ultra-low-capacity photodiode

Ultra-low-capacity photodiode

No need for electromagnetic shielding outside! Successfully reduced the capacity of the photodiode to less than a fraction and achieved wideband expansion.

The light-receiving system experiences a decrease in sensitivity when broadened in bandwidth, and high-sensitivity light-receiving ICs have the issue of being easily affected by external noise. We have successfully developed a new type of light-receiving element that addresses these challenges, resulting in a light-receiving IC that is both broadband and high-sensitivity while being less susceptible to external noise. Our new photodiode achieves broadband capability through an ultra-low capacitance that is less than a fraction of the limits of conventional technology, thanks to its unique structure. It can incorporate a shielding effect internally, eliminating the need for external electromagnetic shielding. 【Features】 ■ High sensitivity in a broad bandwidth ■ Parasitic capacitance is less than a fraction compared to conventional photodiodes ■ Light-receiving element unaffected by external noise *For more details, please refer to the PDF document or feel free to contact us.

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Low polarization-dependent loss InGaAs photodiode

Low polarization-dependent loss InGaAs photodiode

Low PDL InGaAs Photodiode

■Effective diameter: 0.3 to 5mm ■High sensitivity ■Cut-off frequency (1.7um) ■Low polarization dependent loss (Low PDL) ■Connector compatible (FC, SC, ST, SMA)

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Linear Array Photodiode

Linear Array Photodiode

Elements 4, 8, 12, and 16 are arranged as a linear array.

■Design with a 250um pitch to match fiber ribbons ■High-speed and low dark current support with an effective diameter of 80um ■Optical isolation of 50dB ■Compatible with O, S, C, and L bands

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InGaAs electronic cooling photodiode

InGaAs electronic cooling photodiode

InGaAs Thermoelectric Cooled PD

■Single/Dual Stage TE Cooler ■Effective diameter: 0.3mm to 5mm ■High shunt resistance ■Low dark current / low leakage current ■High sensitivity ■Cut-off wavelengths: 1.7, 1.9, 2.05, 2.2, 2.6μm ■Standard package: TO-5, TO-8, TO-66 ■Custom package with fiber pigtail and SMA receptacle

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Near-infrared wideband InGaAs photodiode

Near-infrared wideband InGaAs photodiode

Extended InGaAs PD

■Aperture: 0.3mm to 3mm ■Cut-off wavelengths: 1.9μm, 2.05μm, 2.2μm, 2.6μm ■High shunt resistance ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Package: TO-46, TO-18, TO-5

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