ICE13N60FP, 13A, 600V TO220FP has arrived.
It is a product that is strong against avalanches.
GEN1 series Other package types are also available.
- Company:アイスモス・テクノロジー・ジャパン
- Price:Other
Last Updated: Aggregation Period:Sep 24, 2025~Oct 21, 2025
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61~75 item / All 90 items
It is a product that is strong against avalanches.
GEN1 series Other package types are also available.
Narrow VGS(th) range! Special finishing on the exposed pad ensures excellent thermal conductivity.
The "TOLT package OptiMOS5 80V/100V" is a semiconductor suitable for main inverters in high-power applications and small electric vehicles. It features a special finish on the exposed pad to ensure excellent thermal conductivity. With electronic control units equipped with high output performance designed for top-side cooling of the power stage more than ever before, Infineon has complemented its MOSFET lineup with a dedicated package to support this new requirement. 【Features】 ■ TOLT package specialized for top-side cooling ■ Minimum RDS(on) reduced to 1.1mΩ at 80V and 1.5mΩ at 100V ■ Low package resistance and minimized parasitic inductance ■ Narrow VGS(th) range ■ Diverse RDS(on) options to meet power requirements for various applications *For more details, please refer to the PDF document or feel free to contact us.
Full of our technical know-how, such as 'Power Equipment Lifespan Verification' and 'DC-DC Converter Design: Key Points in Power Design'!
This document summarizes the WTI blog from Wave Technology Co., Ltd., which is engaged in "development and design promotion business" to solve the shortage of engineers, covering the years 2017 to 2019, focusing on power supplies and power electronics. It includes topics such as "Differences between CMOS [low-voltage MOSFET] and power semiconductors," "Verification of the lifespan of power supply equipment," and "We tried to improve the efficiency of power supplies using SiC devices." Please take a moment to read it. [Contents (excerpt)] ■ 2017.5.16 Understanding principles and fundamentals is important for engineers! ■ 2017.9.5 The unsung hero of solar power generation systems – What is a power conditioner? ■ 2017.9.19 Differences between CMOS [low-voltage MOSFET] and power semiconductors ■ 2017.12.5 Development of devices supporting the electrification of automobiles ■ 2018.3.13 Pay attention to inductance that does not appear in circuit diagrams *For more details, please refer to the PDF document or feel free to contact us.
The power semiconductors developed by the high-reliability power supply manufacturer "Shinden Gen Industrial" enable rapid design of power circuits for air conditioner indoor unit controllers and motor drive circuits!
Shindengen offers solid proposals for power circuits, including negative ion generators and automatic cleaning machines. The outdoor units of home air conditioners feature a highly specialized circuit design that integrates distinctive functions such as power supply for controllers, blower fan drive circuits, cleaning drive circuits, and circuits for negative ion generators. A flyback control IC with high energy-saving performance in standby mode is also essential. Air conditioners chosen at electronics retail stores particularly emphasize energy-saving performance. Shindengen's power semiconductors have a wealth of experience in home appliances! ■ Develop new products with the latest power circuits! When the power circuit is well-designed, it results in a pleasant new product. At Shindengen, we provide a wide range of power semiconductors suitable for various applications, from bridge diodes to power MOSFETs and power ICs, enabling you to quickly build high-quality power circuits. For energy efficiency and space-saving solutions, consult with Shindengen, the power expert. The power devices developed by the highly reliable power supply manufacturer 'Shindengen' are designed for low loss and rationalization, suitable for high voltage and high current circuits. We excel in power circuit proposals!
SiC semiconductor, metal-oxide-semiconductor (MOS) junction device, power device, hard electronics, quantum effect device.
Silicon carbide (SiC) can form a SiO2 film on its surface through thermal oxidation, and with the mass production of 8-inch wafers and the development of device fabrication technology, it is a semiconductor material that is as easy to apply in devices as Si semiconductors. Additionally, it possesses properties similar to diamond, such as wide bandgap, high radiation resistance, high thermal resistance, and robustness. SiC truly is a material that takes the best of both Si and C (diamond)! Furthermore, recent research over the past few years has revealed that SiC contains single defects similar to diamond NV centers, which can be utilized as single photon sources or spins, opening up pathways for applications in quantum computing, quantum photonics, and quantum sensing.
8V, 4.7mΩ, P-channel NexFET power MOSFET 'CSD22206W'
This -8V, 4.7mΩ, 1.5mm×1.5mm device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible footprint, while also providing excellent thermal characteristics in a very low profile. With its low on-resistance, small footprint, and low profile, this device is ideal for battery-powered applications with volume constraints. 【Features】 ■ Extremely low resistance ■ Small footprint of 1.5mm×1.5mm ■ Lead-free ■ Gate ESD protection ■ RoHS compliant *For more details, please contact us.
Developed through reliable experience and accumulated technology! Featuring various rectifier diodes and high-voltage Zener diodes.
This catalog introduces the semiconductors handled by our company. It includes "general rectifier diodes," which are compact and thin with a small mounting area, as well as "silicon varistors," which have high reliability for communication industrial applications. High-voltage diode modules are used in the medical device market, large current diode modules and snubber modules are used in railways and industrial equipment, surface mount diodes are used in cameras, mobile devices, and communication equipment, and custom modules are adopted in the automotive sector, covering a wide range of fields. [Contents (excerpt)] ■ General rectifier diodes ■ High-speed rectifier diodes ■ Ultra-fast rectifier diodes ■ Silicon varistors ■ High-voltage rectifier diodes *For more details, please refer to the PDF document or feel free to contact us.
Product introduction of power MOSFET products for power supply applications.
【BOOST MOS】 Application: Boost-type DC-DC converters, etc. Package: TO-252, TO-220FP Voltage Rating: 100V to 250V Features: Low R<sub>DS(ON)</sub>, high current capability, low Qg 【BUCK MOS】 Application: Buck-type DC-DC converters Package: TO-220FP Features: Ultra-low on-resistance (5.3mΩ and above) 【SR MOS (Synchronous Rectification MOSFET)】 Application: Efficiency improvement in rectification stages Features: High-speed switching, low Qg 【Power Saving MOS】 For ultra-low current applications (e.g., 0.033A class) Compact SOT-23 package 【Power Switch MOS】 Application: ON/OFF control for power lines Package: Various including DFN3x3, SOP-8 Features: Low on-resistance, high current control capability 【Signal Switch MOS】 For low current and low voltage switching applications Supports ultra-compact packages (such as SOT-23) 【GaN/SiC WBG Devices】 GaN HEMT and SiC SBD (Schottky Barrier Diode) High voltage products planned, such as 650V class
Remarkable progress in the manufacturing of power semiconductors for electric vehicles.
We will hold a seminar titled "Fuji Electric's Power Semiconductor Business Strategy and Future Developments." In the global trend towards carbon neutrality, renewable energy, energy conservation, electrification, and electrification, Fuji Electric has been focusing on and expanding its power semiconductors for electric vehicles and renewable energy/energy conservation in recent years. In the power semiconductor market, where strong competitors from Europe, the United States, and Japan are vying for position, and Chinese manufacturers are also gaining influence, we will provide a detailed explanation of Fuji Electric's business strategy for power semiconductors, particularly those for electric vehicles, including market trends and technological trends for the current mainstay power semiconductor, IGBT, and the SiC MOSFET, which is expected to grow in the future. 【Seminar Details】 ■ Date and Time: November 25, 2024 (Monday) 13:30 - 15:30 (Doors open at 13:00) ■ Venue: JPI Conference Square ■ Address: 5-2-32 Minami Azabu, Minato-ku, Tokyo, Kowa Hiroo Building ■ Participation Method: In-person, live streaming, archived streaming ■ Speaker: Fuji Electric Co., Ltd. Semiconductor Business Division Fellow (Ph.D. in Engineering) Mr. Tatsuhiko Fujihira *For more details, please refer to the PDF document or feel free to contact us.