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Analysis Product List and Ranking from 182 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

Analysis Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

  1. ビーエルテック Tokyo//Testing, Analysis and Measurement
  2. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  3. 同仁グローカル Kumamoto//others
  4. 4 西進商事 Hyogo//Industrial Machinery
  5. 5 オーハウス コーポレーション 日本支社 Tokyo//Industrial Electrical Equipment
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Analysis Product ranking

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

  1. Analysis, precision balance │ EXPLORER series *Comprehensive catalog available オーハウス コーポレーション 日本支社
  2. Seawater Nutrient Measurement Device Quattro ビーエルテック
  3. Certified single-element and mixed standard solutions for ICP-AES/ICP-MS wet analysis. 西進商事
  4. [Information] Understanding Chemikan in 3 Minutes ケミカン
  5. 4 Total Nitrogen and Total Phosphorus Analysis Device Quattro ビーエルテック

Analysis Product List

76～90 item / All 655 items

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[SIM] Scanning Ion Microscopy Method

[SIM] Scanning Ion Microscopy Method

Observation of SIM images is possible with high resolution (accelerating voltage 30kV: 4nm).

- SIM imaging observation is possible with high resolution (accelerating voltage 30kV: 4nm). - Compared to SEM images, SIM images provide information about the extreme surface layer. - Observation of metal crystal grains is possible (e.g., Al, Cu). - The resolution is inferior to SEM images (SIM: 4nm, SEM: 0.5nm). ■Features of MST-owned equipment - Compatible with JEIDA standard wafers with a maximum sample size of 300mm in diameter. - Continuous cross-sectional SIM imaging acquisition is possible in combination with FIB (Focused Ion Beam) processing (Slice & View).

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[Analysis Case] Evaluation of Crystal Grains and Resistance in CIGS Thin-Film Solar Cells

[Analysis Case] Evaluation of Crystal Grains and Resistance in CIGS Thin-Film Solar Cells

Resistance distribution and evaluation of crystal grains and grain boundaries at the same location.

In SSRM, we can obtain insights into local resistance, while in EBSD, we can gain knowledge about crystal grains and grain boundaries. By conducting SSRM measurements at the same location as the EBSD measurements, we measured the local resistance in areas that include crystal grain boundaries, which we would like to introduce.

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[Analysis Case] Observation of Crosshatch Pattern Shape

[Analysis Case] Observation of Crosshatch Pattern Shape

It is possible to visualize small irregularities with high vertical resolution.

A scanning white light interferometer (optical interferometer) can perform high-precision non-contact three-dimensional measurements of the surface shape of a sample with "high vertical (Z) resolution (0.1 nm) and a wide (X-Y) measurement field of view (50 μm to 4.2 mm)." An example of observing the surface shape of a Si/SiGe layered sample (crosshatch pattern) is presented. Shape evaluation with an average roughness (Ra) of approximately 1 nm is possible.

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[Analysis Case] Evaluation of the Distribution of High Fatty Acids in Hair

[Analysis Case] Evaluation of the Distribution of High Fatty Acids in Hair

Visualization of the distribution of high-grade fatty acids.

Using TOF-SIMS for ion imaging analysis of hair (beard) cross-sections, we investigated the distribution of long-chain fatty acids, which are also detected as sebum. As a result, it was found that the distribution varies depending on the type of fatty acid.

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[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

Consistent analysis from preprocessing to luminescence location identification.

By using a high-voltage power supply (capable of applying up to 2000V), it is possible to induce breakdown in diodes with high breakdown voltage. In this case, a SiC Schottky diode with a breakdown voltage of 600V was operated, and by applying high voltage in the reverse direction, breakdown was induced. After removing the cathode electrode through polishing, emission microscopy observations were conducted to identify the location of the breakdown current generation. Commercially available products were used for the measurements.

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[Analysis Case] Three-Dimensional Distribution Evaluation of Dopants in MEMS Using SIMS

[Analysis Case] Three-Dimensional Distribution Evaluation of Dopants in MEMS Using SIMS

Imaging SIMS allows for the visualization of concentration distributions of trace elements in micro-regions.

We conducted three-dimensional imaging SIMS measurements of commercial MEMS products for B and As (measurement area: 75μm square, depth: approximately 1.5μm). After data processing, it is possible to extract surface distributions at arbitrary cross-sections and depths, depth direction distributions in arbitrary areas, and line profiles at arbitrary locations. Note: Since the sample is being excavated with an ion beam while capturing images in the depth direction, this constitutes destructive analysis.

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What is a HAADF-STEM image?

What is a HAADF-STEM image?

HAADF-STEM: High-Angle Annular Dark Field Scanning Transmission Electron Microscopy

■Principle HAADF-STEM (High-angle Annular Dark Field Scanning TEM) images are obtained by scanning a finely focused electron beam across the sample and detecting the electrons that are scattered at high angles using an annular detector. ■Features Materials with a larger Z2ρ scatter more at high angles ↓ Heavy elements appear dark in STEM images and bright in HAADF-STEM images. Since contrast is obtained that is proportional to atomic number (Z), it is also referred to as Z-contrast imaging.

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[Analysis Case] Resistance Evaluation of Heterojunction Interface in CIGS Solar Cells

[Analysis Case] Resistance Evaluation of Heterojunction Interface in CIGS Solar Cells

Evaluation of local resistance distribution using scanning spreading resistance microscopy (SSRM) under vacuum.

The heterojunction interface of ZnO/CdS/CIGS in CIGS thin-film solar cells was analyzed using the SSRM method, and the local resistance distribution was measured. By conducting measurements in a vacuum environment, we were able to remove adsorbed water from the measurement surface and achieve high spatial resolution. The measurement results indicate that we can measure the resistance values of each layer with nanometer-level spatial resolution. The resistance values of each layer differ by several orders of magnitude, indicating differences in carrier concentration. It was found that the CIGS layer has a higher resistance than the i-ZnO layer, and that CdS has an even higher resistance than these layers.

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[Analysis Case] Structural Analysis of Silicon Dioxide

[Analysis Case] Structural Analysis of Silicon Dioxide

Structural analysis of amorphous silicon dioxide (SiO2) using Raman scattering spectroscopy.

Silicon dioxide (SiO2) is widely used in semiconductors as an insulating film, in FPD substrate materials, optical materials, and from medical devices to jewelry; however, conducting structural analysis on glass, which is amorphous, is very challenging. Focusing on the cyclic bonding of SiO2 in glass, Raman measurements were conducted. (Figure 1) In single crystal quartz, the spectrum in the glass state is significantly different, and phonon bands due to long-range order are observed. (Figures 2, 3)

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[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films

[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films

Estimation of film thickness using the average free path of photoelectrons.

For extremely thin films with a thickness of a few nanometers or less, such as natural oxide films on silicon wafers and silicon nitride thin films, we will measure the Si2p spectrum of the sample's surface. By performing waveform analysis on the obtained spectrum, we will determine the proportion of each bonding state and estimate the film thickness from this result and the average free path of photoelectrons (Equation 1).

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FIB low acceleration processing

FIB low acceleration processing

FIB: Focused Ion Beam Processing

In the method for preparing thin film samples for TEM observation using FIB, high-energy Ga ions (acceleration voltage of 30 kV) are used, resulting in the formation of a damage layer on the processed surface, which causes a deterioration in the image quality of the TEM. By performing processing at a lower acceleration (2 kV) than conventional methods, the damage layer can be reduced, leading to improved image quality. By reducing the damage on the FIB processed surface through low-acceleration FIB processing, high-quality and reliable data can be obtained in TEM image observation and EELS measurements.

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Micro-sampling method

Micro-sampling method

FIB: Focused Ion Beam Processing

It is possible to directly extract small pieces from the sample (micro-sampling) and perform FIB processing.

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Strong support for research and development: "Contract Analysis Services"

Strong support for research and development: "Contract Analysis Services"

We will conduct contract analysis of materials and products entrusted to us by our customers. We will handle everything from pre-treatment to measurement and provide analysis data.

MST offers various materials and research contract analysis, contract evaluation, and contract assessment services. Our knowledgeable sales representatives will propose the optimal analysis plan! With assured quality and reliable support, we leave no questions unanswered for our customers. We broadly accommodate contract analysis and contract evaluation in the electronics field, including semiconductors, metals, and batteries, as well as in the life sciences field, including pharmaceuticals, cosmetics, and food. - We accept inquiries regarding analysis methods. - Please feel free to contact us for a cost estimate for analysis. - Inquiries and applications regarding analysis are accepted via phone or contact form. 【Examples of Contract Analysis Data】 ○ TEM Analysis: Observation at the atomic level ○ SIMS Analysis: Evaluation of impurity concentration ○ XRD Analysis: Identification of crystals using X-rays For more details, please download the catalog or contact us.

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[Analysis Case] PL Mapping of Multicrystalline Silicon Solar Cells

[Analysis Case] PL Mapping of Multicrystalline Silicon Solar Cells

It is possible to non-destructively identify the location of defects in solar cell cells.

When light with energy greater than the bandgap of a solar cell is irradiated, carriers are generated, and some of them undergo radiative recombination. The light emitted during this process is called photoluminescence (PL). However, in areas where defects are present, carriers are trapped, resulting in reduced PL intensity. Therefore, by conducting PL mapping measurements, it is possible to non-destructively and easily identify defect locations. Below is an example of identifying defect locations through PL mapping measurements in multicrystalline silicon solar cell modules.

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[Analysis Case] Investigation of Curing Temperature and Glass Transition Temperature of Epoxy Resin

[Analysis Case] Investigation of Curing Temperature and Glass Transition Temperature of Epoxy Resin

Evaluation of thermal properties by DSC (Differential Scanning Calorimetry) measurement.

For the two-component mixed epoxy resin, we investigated the curing temperature and the glass transition temperature (Tg), which is an indicator of heat resistance, using Differential Scanning Calorimetry (DSC). When measuring the resin before curing with DSC, it was confirmed that a rapid exothermic reaction began around 103°C (Figure 1). This was due to the polymerization (curing) of the resin occurring as a result of the temperature increase. Furthermore, after air cooling the cured resin to room temperature, a second DSC measurement was conducted, which confirmed a shift of the baseline towards the endothermic side due to the glass transition of the resin, with Tg being approximately 116°C (Figure 2).

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