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Analysis Product List and Ranking from 181 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

Analysis Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

  1. ビーエルテック Tokyo//Testing, Analysis and Measurement
  2. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  3. 同仁グローカル Kumamoto//others
  4. 4 西進商事 Hyogo//Industrial Machinery
  5. 5 オーハウス コーポレーション 日本支社 Tokyo//Industrial Electrical Equipment
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Analysis Product ranking

Last Updated： Aggregation Period:Oct 01, 2025～Oct 28, 2025
This ranking is based on the number of page views on our site.

  1. Analysis, precision balance │ EXPLORER series *Comprehensive catalog available オーハウス コーポレーション 日本支社
  2. Seawater Nutrient Measurement Device Quattro ビーエルテック
  3. Certified single-element and mixed standard solutions for ICP-AES/ICP-MS wet analysis. 西進商事
  4. [Information] Understanding Chemikan in 3 Minutes ケミカン
  5. 4 Total Nitrogen and Total Phosphorus Analysis Device Quattro ビーエルテック

Analysis Product List

91～105 item / All 654 items

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[Analysis Case] Evaluation of Si Anode in Lithium-Ion Secondary Batteries

[Analysis Case] Evaluation of Si Anode in Lithium-Ion Secondary Batteries

It is possible to evaluate the structure of the Si anode after charging through sample cooling.

Si is one of the candidates for high-capacity negative electrode active materials, but it is said to suffer from severe cycle degradation due to very large volume changes during charge and discharge. In this study, to confirm the state of the Si negative electrode after charging, we disassembled it under a controlled atmosphere environment and performed cooling FIB processing, followed by observing the cross-sectional shape using SEM. When observing the cross-section at room temperature, significant damage such as film contraction, roughness of the observation surface, and pore formation was observed. In contrast, by conducting the observation while cooling, we were able to suppress the alteration of the Si negative electrode and evaluate the original shape of the sample.

  • 冷却FIB加工_室温SEM観察.png
  • 充電曲線およびSi負極の形態観察.png
  • 充電後の形状観察結果_Si膜の変質_Cu箔の露出.png
  • 電池図.png
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[Analysis Case] Evaluation of Lithium-Ion Secondary Battery Separators

[Analysis Case] Evaluation of Lithium-Ion Secondary Battery Separators

Cool the sample and evaluate the shape of the separator more accurately.

The separator, which is a key component material of batteries, significantly influences the characteristics and safety of the battery due to its porosity, shape, and other factors. Currently, mainstream polymer materials such as polyethylene (PE), polypropylene (PP), or their composites have low softening points, with PE around 125°C and PP around 155°C. This report presents a case study where the cooling of a low softening point PP separator was conducted to suppress degradation and evaluate its structure.

  • 室温FIB.png
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[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

Detection cases of stacking faults in SiC.

SiC has been actively researched and utilized in recent years for applications such as power devices. Due to the various polytypes of SiC, there is a problem where stacking defects, which can lead to disordered stacking arrangements, easily occur. One method for detecting these defects is photoluminescence (PL), which analyzes the light emitted when a sample is stimulated with light. We will introduce a case where mapping measurements were conducted to detect light emission caused by defects.

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[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS

[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

From the perspective of cost reduction, the use of high-resistance Si substrates for power devices made of GaN is expected. However, it is said that if Al and Ga diffuse to the surface of the Si substrate during high-temperature film formation, a low-resistance layer is formed, leading to leakage. Therefore, we will introduce a case where SIMS analysis was conducted to evaluate the presence or absence of Al and Ga diffusion into the Si substrate. To accurately assess trace diffusion, measurements were conducted from the Si substrate side towards the GaN layer.

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[Analysis Case] Evaluation of Element Distribution in Textured GaN-based LEDs

[Analysis Case] Evaluation of Element Distribution in Textured GaN-based LEDs

Even with a structure that has uneven surfaces, depth distribution evaluation is possible through flattening processing.

GaN-based LEDs have become widely used for lighting applications. To enhance the light extraction efficiency, textured surfaces may be created; however, these textures can lead to a degradation in depth resolution during depth analysis. We will present cases where flattening processing was applied to textured surfaces to mitigate the degradation of depth resolution and evaluate the depth concentration distribution, as well as cases where analysis was conducted from the backside (substrate side).

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[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

Evaluation of localized elements is possible with imaging SIMS.

Imaging SIMS measurements were conducted on a 50μm square area on the emitter side of the NPT-IGBT. Figure 1 shows the ion images of 11B and As obtained from the analysis. It can be seen that 11B and As are injected into the same area. Additionally, while conventional analysis calculates the average concentration of each element over the entire detection area, imaging SIMS measurements allow for the extraction of partial depth profiles, enabling the evaluation of the concentration distribution of dopants localized in the plane (Figure 2).

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[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate

[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate

Evaluate film thickness, density, and bonding state.

SiC power devices are expected to reduce power loss and handle large power in a compact form as power conversion elements. We will introduce a case where the thickness and density of the gate oxide film, necessary for improving the characteristics of the device, were evaluated using XRR (X-ray reflectivity) and the bonding state was assessed using XPS (X-ray photoelectron spectroscopy).

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[Analysis Case] Numerical Evaluation of Active Material Volume by Three-Dimensional SEM

[Analysis Case] Numerical Evaluation of Active Material Volume by Three-Dimensional SEM

It is possible to calculate the volume of each substance from Slice&View data.

Using data from Slice&View (a method that repeatedly performs FIB processing and SEM observation to obtain dozens of continuous images), it is possible to calculate the volume of particles and other micron-sized objects. This allows us to obtain information such as the presence ratio and average volume of each substance within a certain volume. In this case study, we will introduce an example where the volume of active material was calculated from the Slice&View analysis results of a lithium-ion secondary battery cathode, and the presence ratio was determined.

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[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

Identification of the interface between contact electrodes and SiC layer, and evaluation of elemental distribution.

We will introduce an analysis case of commercially available SiC power MOSFET devices. In SiC materials, it is essential to control the materials in a system that includes not only Si but also C, which differs from the conventional manufacturing methods of Si semiconductors. In the process of forming ohmic junctions between the contact electrodes and the SiC layer, we evaluated the elemental distribution and crystal phases, including C, using EDX/EELS analysis with TEM and electron diffraction.

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[Analysis Case] Lock-in Thermal Analysis of Package Products

[Analysis Case] Lock-in Thermal Analysis of Package Products

Non-destructive analysis of leakage points in Si-based power diodes.

In lock-in thermal analysis, it is desirable to increase the frequency to narrow down the hotspots; however, there is a problem that the sensitivity decreases. Therefore, it is important to shift the measurement conditions from the high-frequency side to the low-frequency side and identify the frequency at which the heating signal begins to be obtained. In this case, we will introduce an example where the heating location associated with leakage current was identified non-destructively in a cylindrical package. Thus, it is possible to identify heating locations even in samples with complex three-dimensional structures, which are difficult to analyze using the liquid crystal method.

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About Cryo-SEM

About Cryo-SEM

Cryo-processing cooling SEM: Scanning Electron Microscopy method

To observe the structure of liquid samples, it is necessary to conduct a series of analyses while maintaining the original structure of the sample. In cryo-SEM, the sample can be observed by rapidly freezing it to create a cross-section. Furthermore, by combining this with cross-section fabrication techniques using FIB processing, it is possible to obtain more detailed information about the internal structure.

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[Analysis Case] Evaluation Case of Hydrogen Injection Sample using SRA/SIMS

[Analysis Case] Evaluation Case of Hydrogen Injection Sample using SRA/SIMS

Introduction to Case Studies on Carrier Concentration Analysis in Lifetime Control Samples

In power semiconductor devices, crystal defects may be formed within the Si substrate for lifetime control. This presents a case study evaluating the carrier concentration distribution due to differences in thermal treatment conditions of hydrogen ions, one of the elements used to create the lifetime control region.

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[Analysis Case] Simultaneous Analysis of Polyphenols in Eucommia Tea

[Analysis Case] Simultaneous Analysis of Polyphenols in Eucommia Tea

Examples of the detection of active ingredients in health foods.

In recent years, with the increase in health consciousness, various health foods have been attracting attention. One of these, Du Zhong tea, is suitable for individuals with high blood pressure and is designated as a Food for Specified Health Uses (Tokubetsu Hōshō). In this case study, Du Zhong tea was analyzed using LC/MS/MS, and five polyphenols were detected: geniposidic acid, chlorogenic acid, asperuloside, p-coumaric acid, and quercetin. Among these components, geniposidic acid, one of the glycosides from Du Zhong leaves, serves as a benchmark for the effective ingredient of Foods for Specified Health Uses.

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Large-diameter imaging SIMS using RAE detectors

Large-diameter imaging SIMS using RAE detectors

SIMS: Secondary Ion Mass Spectrometry

Imaging SIMS is effective for obtaining spatial distribution information of hydrogen and impurities at ppm levels. By using a RAE (Resistive Anode Encoder) detector for projection-type imaging SIMS, it is possible to obtain distribution images with a larger diameter and deeper regions compared to the commonly used scanning methods in imaging analysis.

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[Analysis Case] Screening Test for Contaminants in Food

[Analysis Case] Screening Test for Contaminants in Food

We analyze with high precision whether pesticides and drugs are mixed in food.

Incidents of foreign substances contaminating food have frequently caused public uproar, and in a Cabinet Office survey conducted in January 2014 regarding the promotion of consumer administration, the consumer issue that garnered the most attention was "food safety." To ensure food safety, MST conducts highly accurate analyses for cause investigation, making it possible to determine whether pesticide levels in food exceed the acceptable daily intake. An analysis of miso soup with a small amount of the herbicide glyphosate added revealed that the contaminant could be detected without overlooking any components.

  • 検査対象成分の一例.png
  • C0350サムネ.png
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