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【BOURNS】Industry-leading high power efficiency and low switching loss.

Optimal for high voltage and high current applications. Current lead time is 24 weeks. [IGBT]

BOURNS has released an IGBT that combines a gate input with a MOS structure and a bipolar power transistor functioning as an output switch. By adopting TGFS technology, it achieves operational characteristics that reduce the collector-emitter saturation voltage V CE(sat) and minimize switching losses. For sample requests, please feel free to contact Seiwa, the authorized distributor.

  • bidw20n60t_part.jpg
  • Transistor

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