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Oxide Product List

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Tohoku Univ. Technology : Oxygen storage material, catalyst for cleaning exhaust gas, and method for manufacturing oxygen storage material : T20-3135

Oxygen storage material comprising oxide containing κ phase having large specific surface area

CeO2-ZrO2 composite oxide with excellent oxygen storage capacity (OSC) has been used as an atmosphere control material for ternary catalysts used to purify exhaust gas from automobiles. Among CeO2-ZrO2 composite oxides, κ phase (cubic pyrochlore like structure) is known to exhibit the highest OSC. However, due to the high temperature required for the synthesis process of κ phase, the specific surface area is significantly reduced and practical application of κ phase is difficult.  In the present invention, it has become possible to provide an atmosphere-controlling material consisting of an oxide containing κ phase, in which the decrease in the specific surface area is greatly suppressed by the synthesis process at a lower temperature than in the conventional process. The low temperature is realized by adding Fe oxide during the synthesis of the complex oxide. The material by this synthesis process shows a clear XRD pattern assigned to the κ phase and has a specific surface area of 3 m2/g or more. This shows the possibility of practical application of the κ phase, and it can be said that the technology is expected to improve the purification ability of exhaust gas.

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Tohoku Univ. Technology :Method for producing Gallium oxide : T19-388

Low-cost, low-temperature, and simple manufacturing processes

γ-Gallium oxide (γ-Ga2O3) is one of the metastable structures of gallium oxide and has excellent catalytic properties. However, it was difficult to be synthesized. In the conventional method for producing γ-Ga2O3, gallium nitrate hydrate was dissolved in distilled water with urea and baked at 500ºC. However, this method required a facility for high-temperature treatment and had a problem of increasing production costs such as equipment costs.   The present invention makes it possible to provide a method for producing gallium oxide at a low temperature and a simple process, thereby reducing production costs.  It is characterized in that a raw material solution containing liquid gallium and a reducing agent is irradiated with ultrasonic waves. Thus, particles of gallium can be refined, and particles having crystals of γ-Ga2O3 can be formed on the surface thereof. As a result, the baking process and the complicated separation and cleaning process are not required, the manufacturing cost is reduced, and γ-Ga2O3 can be produced by a simple process at a low temperature.

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Oxide wafer

Introducing precision grinding of oxide materials, such as back processing of patterned wafers!

Nihon Exceed specializes in precision grinding and cleaning of oxide materials and other substances. Supported sizes range from Φ63mm to Φ150mm and 3mm×3mm to 100mm×100mm. Our company possesses the technology to thin the backside of patterned wafers to a specified Ra value through lapping (back lapping). 【Oxide Wafers】 ■Supported sizes: Φ63mm to Φ150mm, 3mm×3mm to 100mm×100mm ■Thickness: 20μm and above ■TTV: 5μm or less ■LTV (5mm×5mm): 0.4μm or less ■Surface roughness: 0.2nm or less ■Back surface roughness: 0.1μm to 4.0μm *For more details, please refer to the PDF document or feel free to contact us.

  • Processing Contract
  • Oxide

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Chinese-made tetravalent manganese oxide (tetravalent manganese oxide Mn3O4)

There is also a low selenium grade (below 5 ppm).

* Granularity, density, BET, etc. can be adjusted according to your requests. * We are minimizing the content of highly toxic selenium as much as possible. Please also visit our inorganic fine chemicals division website.

  • Secondary Cells/Batteries
  • magnet
  • Other electronic parts
  • Oxide

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China-made tetravalent manganese oxide (Mn3O4)

It is a product with limited producers worldwide.

* There is a track record for ferrite applications, etc. * The manufacturer is currently expanding production capacity. For more details, please contact us. Also, please take a look at our department's and the inorganic fine chemicals department's website.

  • magnet
  • alloy
  • Other metal materials
  • Oxide

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Chinese-made tetra-cobalt (chlorine-free) Co3O4

Adjustment specifications that reduce chlorine to the limit using special technology while adjusting particle size.

It is available for use in EV batteries and electronic materials. Thanks to our collaboration with suppliers through our Chinese subsidiary, we can arrange for a short lead time with Chinese products. This is an adjusted product with controlled particle size and minimized chlorine content. Please also visit our inorganic fine chemicals website.

  • Other metal materials
  • Sensors
  • Oxide

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Tohoku University Technology: Method for producing Proton-containing oxides : T21-224

To enrich the variety of ceramic materials developed that contain protons.

Research and development of high-proton-conducting oxides, which are stable at intermediate temperatures around 300 ~ 600°C, have been carried out for practical applications in electrochemical devices such as fuel cells. However, since most of the existing materials are synthesized through high-temperature sintering, they are limited to perovskite-type or related crystal systems or specific material systems, and the degree of freedom of crystal structure and composition is limited, which limits the development of practical materials.  The present invention relates to a manufacturing technique for obtaining a proton-containing oxide by introducing a proton into an oxide by reacting a basic oxide with a carboxylic acid melt. According to this method, it is possible to introduce a proton into various ceramics, which are conventionally difficult to examine, and the range of material selection can be expanded. The present invention, which does not select the shape of the raw material, is expected to be applicable to components such as electrochemical devices, and contributes to the practical application of proton-conducting oxides.

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