1～15 item / All 23 items
GPD Corporation is a global company that manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.
■Aperture: 0.3mm to 5mm ■Wavelength: 0.5 to 1.7μm ■Linear operation ■Low dark current, high sensitivity ■Fiber pigtail (single mode/multi mode) ■Package: TO-46, TO-18, TO-5, TO-8
Two-Color Sandwich PD
■On InGaAs: Si (1.7, 2.05, 2.2, 2.6μm) ■Effective diameter of the upper light receiving part: 2.0mm or 5.0mm ■Effective diameter of the lower light receiving part: 1mm, 2.0mm or 3.0mm ■On InGaAs (1.7, 2.05, 2.2, 2.6μm): InGaAs (1.7μm) ■Effective diameter of the lower light receiving part: 1mm or 2.0mm ■Standard package: TO-5, TO-8
InGaAS Quadrant PD
■Wavelength range: 800nm to 1700nm ■Effective diameter: 0.5 / 1.0 / 1.5 / 2.0 / 3.0mm ■High sensitivity ■High shunt resistance ■Low dark current ■Low capacitance for high segment bandwidth ■Standard package: TO-5, TO-18
Large Area InGaAs PD
■Aperture: 0.5mm to 5mm ■Cut-off wavelength: 1.7μm ■High-sensitivity shunt resistor ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Optical filters: density and bandpass filters ■Package: TO-46, TO-18, TO-5, TO-8
GaAs PIN photodiode (TO-46 Can/ROSA compatible) optimal for VCSEL optical communication.
■Supports up to 25Gbps ■Available in SC/LC receptacle compatible ROSA or TO46-CAN package ■With ball lens or dome lens / with TIA
◆Sensitivity range: 400nm to 1100nm ◆Solderable chip photodiode ◆Solar cells, etc. ◆Photoconductive (solar cell) solderable chip
■Large effective diameter ■Abundant sizes ■High shunt resistance ■With leads or without leads Large active area photodetectors or detectors provide a low-cost approach for applications that require them to be considered "disposable." They can be used with soldered leads or as standalone bare dies. The sensitivity range is from 400nm to 1100nm.
◆High-speed 70μm InGaAs photodetector◆Combining a sealed TIA and detector in a TO-46 package
The FCI-H155/622M-InGaAs-70 series is a high-speed 70μm InGaAs photodetector equipped with a wide-range transimpedance amplifier. By combining a sealed TIA and detector in a 4-pin TO-46 package, it provides ideal conditions for high-speed signal detection and amplification. 【Model Name: Active Area (Diameter)・Responsivity 1310nm・Responsivity 1550nm・Dark Current・Capacitance・Rise Time・Reverse Voltage】 ●FCI-InGaAs-70: 70 μm・0.9 A/W・0.95 A/W・0.03 nA, Vr=5.0V・1.5 pF, Vr=5.0V・0.2 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-120: 120 μm・0.9 A/W・0.95 A/W・0.05 nA, Vr=5.0V・2 pF, Vr=5.0V・0.3 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-300: 300 μm・0.9 A/W・0.95 A/W・0.3 nA, Vr=5.0V・10 pF, Vr=5.0V・1.5 ns, Vr=5.0V・15 V, max
◆Nd:YAG sensitivity High voltage resistance ◆Large effective diameter ◆High-speed sensitivity ◆High precision ◆Low capacitance, low noise, and high-speed operation are possible
◆For position detection of YAG laser output light ◆Photodiode optimized for high sensitivity at 1060nm ◆Operates at a high reverse bias voltage (200 volts) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements for mass production.
◆Package with quartz or ultraviolet-transmitting glass window ◆Increased performance at high speeds due to low dark current and low capacitance with reverse bias
◆Wavelength sensitivity ranges from 200nm to 1100nm Packaged with quartz or ultraviolet transmitting glass windows, these detectors have a wavelength sensitivity from 200nm to 1100nm. They can enhance performance at high speeds due to low dark current and low capacitance with reverse bias. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements of mass production.
◆Plastic encapsulated photodiode ◆High quality, high reliability ◆High-density package ◆Robust molded package
- Low dark current - Standard lead - SMT - Molded lens - Sideways available - Filter on chip (700nm cutoff) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and over 30 years of experience. We continue to create efficient manufacturing and excellent engineering solutions to meet the requirements of mass production. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience and efficient manufacturing know-how developed to meet the requirements of mass production, we provide products that excel in reliability and cost performance.
◆GaAs photodiode ◆Semiconductor optical sensor based on GaAs ◆Sensitive from 400 to 850 nm
This is a semiconductor optical sensor based on GaAs that generates photocurrent when incident light enters the active area. It generally has sensitivity from 400 to 850 nm. 【Photodiode Array】 FCI-GaAs-XXm is a GaAs PIN photodetector array designed for high-speed fiber receivers and application monitors, consisting of 4 to 12 elements. ● Specifications [Model Name: Active Area, Responsivity, Capacitance, Dark Current, Maximum Reverse Voltage, Maximum Forward Current, Bandwidth, Breakdown Voltage, Package] - FCI-GaAS-4M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-4M - FCI-GaAS-12M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-12M
Low PDL InGaAs Photodiode
■Effective diameter: 0.3 to 5mm ■High sensitivity ■Cut-off frequency (1.7um) ■Low polarization dependent loss (Low PDL) ■Connector compatible (FC, SC, ST, SMA)
Elements 4, 8, 12, and 16 are arranged as a linear array.
■Design with a 250um pitch to match fiber ribbons ■High-speed and low dark current support with an effective diameter of 80um ■Optical isolation of 50dB ■Compatible with O, S, C, and L bands
InGaAs Thermoelectric Cooled PD
■Single/Dual Stage TE Cooler ■Effective diameter: 0.3mm to 5mm ■High shunt resistance ■Low dark current / low leakage current ■High sensitivity ■Cut-off wavelengths: 1.7, 1.9, 2.05, 2.2, 2.6μm ■Standard package: TO-5, TO-8, TO-66 ■Custom package with fiber pigtail and SMA receptacle
Extended InGaAs PD
■Aperture: 0.3mm to 3mm ■Cut-off wavelengths: 1.9μm, 2.05μm, 2.2μm, 2.6μm ■High shunt resistance ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Package: TO-46, TO-18, TO-5
