Electrostatic Photoresist "Elecoat EU-XC Series"
Formation of resist by electrophoretic method
It is a negative-type photoresist solution. The resist is formed using an electrophoretic method.
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Formation of resist by electrophoretic method
It is a negative-type photoresist solution. The resist is formed using an electrophoretic method.
Structural analysis of photosensitizers is possible using thermal decomposition GC/MS method.
Positive-type photoresists are widely used as photolithography materials in semiconductor device manufacturing. The materials used in the resist vary significantly depending on the exposure light source, but for g-line and i-line resists, phenolic novolak resin is generally used as the base resin, and naphthoquinone diazide compounds are used as the photosensitizer. This case study introduces an example where naphthoquinone diazide compounds were decomposed using thermal decomposition GC/MS method to estimate the structure of the parent nucleus.
Electrodeposition process of negative-type photoresist to achieve high-precision plating areas.
The Erecote EU-XC process is a photoresist electrophoretic process that achieves high-precision partial plating on uneven surfaces and three-dimensional shapes. This electrophoretic resist has excellent chemical resistance and can be used as a resist for silver cyanide plating, as well as for gold plating and copper sulfate plating. It features excellent edge coverage and achieves high-precision developability. It is a negative-type electrophoretic photoresist that enables precise partial plating and can also be used as an etching resist.
It is a negative-type anion electrostatic photoresist!
Since it is an anionic electrophoretic negative-type photoresist, the developer and stripping solution will be alkaline. The developer and stripping solution are not specialized products.
World Market for Patterning Materials: 193NM Immersion Resist, Positive 193 NM Dry Resist, Positive 248 N ...
This research report (Global Patterning Materials Market) investigates and analyzes the current state and outlook for the global patterning materials market over the next five years. It includes information on the overview of the global patterning materials market, trends of major companies (sales, selling prices, market share), market size by segment, market size by major regions, and distribution channel analysis. The segments by type in the patterning materials market include 193NM immersion resist, positive 193 NM dry resist, positive 248 NM resist, I-Line/G-Line resist, and others. The segments by application include automotive sensors, DRAM, glass printed circuit boards, MEMS & NEMS devices, and others. The regional segments are divided into North America, the United States, Europe, Asia-Pacific, Japan, China, India, South Korea, Southeast Asia, South America, the Middle East, and Africa, to calculate the market size of patterning materials. The report also includes the market share of major companies in patterning materials, product and business overviews, and sales performance.