Electrostatic Photoresist "Elecoat EU-XC Series"
Formation of resist by electrophoretic method
It is a negative-type photoresist solution. The resist is formed using an electrophoretic method.
- Company:シミズ
- Price:Other
1~4 item / All 4 items
Formation of resist by electrophoretic method
It is a negative-type photoresist solution. The resist is formed using an electrophoretic method.
Structural analysis of photosensitizers is possible using thermal decomposition GC/MS method.
Positive-type photoresists are widely used as photolithography materials in semiconductor device manufacturing. The materials used in the resist vary significantly depending on the exposure light source, but for g-line and i-line resists, phenolic novolak resin is generally used as the base resin, and naphthoquinone diazide compounds are used as the photosensitizer. This case study introduces an example where naphthoquinone diazide compounds were decomposed using thermal decomposition GC/MS method to estimate the structure of the parent nucleus.
Electrodeposition process of negative-type photoresist to achieve high-precision plating areas.
The Erecote EU-XC process is a photoresist electrophoretic process that achieves high-precision partial plating on uneven surfaces and three-dimensional shapes. This electrophoretic resist has excellent chemical resistance and can be used as a resist for silver cyanide plating, as well as for gold plating and copper sulfate plating. It features excellent edge coverage and achieves high-precision developability. It is a negative-type electrophoretic photoresist that enables precise partial plating and can also be used as an etching resist.
It is a negative-type anion electrostatic photoresist!
Since it is an anionic electrophoretic negative-type photoresist, the developer and stripping solution will be alkaline. The developer and stripping solution are not specialized products.