SiC (Silicon Carbide)
Small on-resistance! It is also used as a substrate for light-emitting diodes.
Introducing the main product of Shinyo Corporation, 'SiC (Silicon Carbide)'. It has a bandgap that is about three times wider than silicon (3.26 eV), a thermal conductivity that is more than three times greater (4.9 W/cm·k), and a breakdown voltage that is about ten times higher (2.8 MV/cm). When the on-resistance is reduced to the same level as silicon at 10 mΩ·cm², the withstand voltage reaches 1200 V. It is suitable for power MOSFETs, IGBTs, Schottky Barrier Diodes (SBD), etc. In addition to semiconductors, it is also used as a substrate for light-emitting diodes (LEDs). [Features (SiC Power Semiconductor Devices)] ■ Low on-resistance ■ Short switching time ■ High-temperature operation *For more details, please refer to the PDF document or feel free to contact us.
- Company：新陽
- Price：Other
