AMB/DBC substrate (Si3N4・AlN)
Si3N4 AMB substrates have a maximum thermal conductivity of 130 W/m·K. AlN AMB and DBC substrates are also available. Samples can be provided in as little as 2 weeks from an order of 5 pieces.
We handle AMB substrates and DBC substrates made of Si3N4 and AlN. The Si3N4 AMB substrate has a thermal conductivity of 40 to 130 W/m·K (with 150 W/m·K currently under development), which offers superior heat dissipation compared to DBC substrates (24 to 28 W/m·K), and it also boasts high strength and excellent thermal shock resistance. It is ideal for applications such as EV/HEV, railways, industrial inverters, and IGBT/SiC modules. We will select the optimal substrate based on your drawings from a wide range of products, including those currently under patent application. We can provide samples in as little as 2 weeks, starting from 5 pieces. Please feel free to contact us with your requests.
- Company：ハイファイクルー
- Price：Other
