オプトロンサイエンス List of Products and Services

■Small diameter: 60μm to 300μm ■Cut-off wavelength: 1.7μm ■Low dark current for high sensitivity ■Low capacitance for high speed (2.5GHz) ■Package: Fiber pigtail, TO-46 with high reliability fiber pigtail, receptacle and sub-mount type

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■Aperture: 0.5mm to 5mm ■Cut-off wavelength: 1.7μm ■High-sensitivity shunt resistor ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Optical filters: density and bandpass filters ■Package: TO-46, TO-18, TO-5, TO-8

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■Aperture: 0.3mm to 3mm ■Cut-off wavelengths: 1.9μm, 2.05μm, 2.2μm, 2.6μm ■High shunt resistance ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Package: TO-46, TO-18, TO-5

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■ Aperture: 80μm to 350μm ■ Sensitivity wavelength range: 900nm to 1650nm ■ Linear operation ■ Low dark current for high sensitivity ■ Low capacitance for high speed ■ High reliability fiber pigtail (single mode/multi mode) ■ Package: Sub-mount with ball lens, TO-46

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■Single/Dual Stage TE Cooler ■Effective diameter: 0.3mm to 5mm ■High shunt resistance ■Low dark current / low leakage current ■High sensitivity ■Cut-off wavelengths: 1.7, 1.9, 2.05, 2.2, 2.6μm ■Standard package: TO-5, TO-8, TO-66 ■Custom package with fiber pigtail and SMA receptacle

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■Wavelength range: 800nm to 1700nm ■Effective diameter: 0.5 / 1.0 / 1.5 / 2.0 / 3.0mm ■High sensitivity ■High shunt resistance ■Low dark current ■Low capacitance for high segment bandwidth ■Standard package: TO-5, TO-18

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■On InGaAs: Si (1.7, 2.05, 2.2, 2.6μm) ■Effective diameter of the upper light receiving part: 2.0mm or 5.0mm ■Effective diameter of the lower light receiving part: 1mm, 2.0mm or 3.0mm ■On InGaAs (1.7, 2.05, 2.2, 2.6μm): InGaAs (1.7μm) ■Effective diameter of the lower light receiving part: 1mm or 2.0mm ■Standard package: TO-5, TO-8

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■Aperture: 0.3mm to 5mm ■Wavelength: 0.5 to 1.7μm ■Linear operation ■Low dark current, high sensitivity ■Fiber pigtail (single mode/multi mode) ■Package: TO-46, TO-18, TO-5, TO-8

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■Design with a 250um pitch to match fiber ribbons ■High-speed and low dark current support with an effective diameter of 80um ■Optical isolation of 50dB ■Compatible with O, S, C, and L bands

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■Effective diameter: 0.3 to 5mm ■High sensitivity ■Cut-off frequency (1.7um) ■Low polarization dependent loss (Low PDL) ■Connector compatible (FC, SC, ST, SMA)

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■ The VBG module has a spectral width of less than 1nm and a wavelength shift temperature dependence of 0.01nm/°C. ■ It is optimal for integration into industrial products such as end-pumped solid lasers and fiber laser excitation.

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■A module equipped with single emitter semiconductor lasers, either individually or in multiples, coupled to a single fiber. ■Capable of low current operation, it possesses a very long lifespan and high reliability. ■Options with monitor PD, guide light, TEC, and thermistor are also available.

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The FCSE04 series features high fiber coupling efficiency and airtightness, along with long lifespan and high reliability. Options are available for a monitor photodiode, guide light, thermistor, TEC, and fiber detection sensor.

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Focuslight's vertical stack and horizontal array semiconductor lasers are available in CW and QCW oscillation types. They have characteristics of a homogeneous beam profile, low smile, and narrow spectral width.

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■Features a homogeneous beam profile, low smile, and narrow spectral width ■Optimal for integration into industrial products due to long lifespan and high reliability

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Focuslight Corporation is a high-power semiconductor laser company founded in 2007 in Xi'an, China.

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It excels in cost performance and is optimal for embedded use in industrial products.

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■Minimization of ribbon electronic/microphonic noise ■1000 times noise level reduction ■High-shield coaxial design ■Ultra high insulation resistance - guaranteed > 10^14Ω ■Assembly with high-quality connectors ■Selectable cables (length: 0.1 to 5.0m)

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■Includes system drivers and application software ■Easy system integration with LabVIEW VI ■Can be used with D-Sub 25-pin amplifiers/photo receivers excluding HLVA-100

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■Input Voltage: 100–240VAC ■Output: ±15V, +400/-250mA ■LEMO Plug ■Short Circuit Protection Circuit ■Low Ripple: Maximum 20mVpp

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- There are two types of diodes: Si and InGaAs, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 5×10^3 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 5×10^3 V/W. - The sophisticated DC-coupled multi-stage amplifier design allows for measurements with a bandwidth of DC–400MHz, corresponding to a minimum rise time of 1ns. - Due to low noise, measurements can be taken without averaging even with light levels of a few μW. - The input can be free space or fiber coupled.

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- The diode type is made of Si/InGaAs, with wavelength ranges of 320–1000nm/850–1700nm respectively. - The Si model HSA-X-S-1G4-SI has a ball range placed on the front of the detector chip, with an active area diameter of 0.8mm. - The transimpedance is 5×10^3 V/A. - The minimum NEP is only 14pW/vHz, making it measurable even at μW range optical power levels.

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- There are two types of diodes: Si-based and InGaAs-based, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 2×10^4 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 2×10^4 V/W. - Thanks to a sophisticated DC-coupled multi-stage amplifier design, measurements with a bandwidth of DC–200MHz corresponding to a minimum rise time of 1.8ns are possible. - The minimum NEP value is approximately 6pW/√Hz, allowing for the detection of optical power signals in the μW range without unnecessary averaging.

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■The photodiodes used are made of Si or InGaAs, with wavelength ranges of 400–1050nm and 900–1700nm, respectively. ■The transimpedance is 10^7 V/A, and the maximum conversion gain is 9.5×10^6 V/W at 1550nm for the InGaAs model. ■The minimum NEP is approximately 75 fW/√Hz, allowing for the measurement of light signals in the nanowatt range without unnecessary averaging.

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■FWPR-20 - A photoreceiver combined with a low-noise Si/InGaAs photodiode and a very high-gain (maximum: 10^12 V/A) low-noise transimpedance amplifier. - Achieves a very low NEP value (minimum: 0.7 fW/√Hz) and high sensitivity in the femtowatt range. - For detection with the photoreceiver alone, it can detect optical power down to approximately 50 fW, and when combined with a Femto lock-in amplifier, it achieves high sensitivity in the sub-femtowatt range. - Due to its very high sensitivity, it can be used in many applications. - It can be used as an alternative to APD, PMT, and cooled Ge photodiodes without the need for expensive high-voltage power supplies or cooling devices.

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- The low noise performance (NEP) is excellent, particularly setting a benchmark for wideband photoreceivers with gain settings in the high and mid-frequency ranges. - The relatively large size of the detector facilitates optical alignment, and when using the Si model with the optionally available fiber optic adapter PRA-FC/SMA, it also guarantees very high coupling efficiency. - The switchable gain of 102 to 108 V/A (in decimal units) allows for accurate and reliable measurements over a very wide dynamic range, from nanowatts to a maximum of 10 mW of optical power. - With many additional features such as a switchable low-pass filter, offset adjustment, switchable AC/DC coupling, and manual and opto-isolated remote control functions via PC, the OE-300 is the most versatile wideband photoreceiver in its class.

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- The conversion efficiency can be set from a range of 10^3 to 10^11 V/W, and AC/DC coupling can also be changed. - It can be controlled both manually and via PC with optical isolation remote. - With a low-noise multi-stage amplifier design and a switchable 10Hz low-pass filter, it can measure optical power down to a minimum range of 100 fW with high accuracy, eliminating the need for signal averaging. - High stability, reduced drift, and calibration based on NIST standards ensure accurate measurements with high stability even at maximum gain settings. - It is ideal for high-speed photodetectors and lock-in amplifier systems in industrial process management and quality inspection systems. - The maximum bandwidth is 500 kHz, making it suitable for time-resolved measurements down to sub-microseconds.

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■Due to being integrated into the resonator, it has a high damage threshold and low insertion loss at 2μm. ■It is applied in laser processing and fusion of plastics. ■Air cooling / water cooling ■1 to 3 mm aperture ■High damage threshold, low insertion loss

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■Due to being integrated into the resonator, it has a high damage threshold and low insertion loss at 1064nm. ■Air-cooled / Water-cooled ■1 to 5mm aperture ■High damage threshold, low insertion loss

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■Custom adjustments can be made over a wide wavelength range beyond the standard tuning wavelength ranges of 400–1000nm, 900–1700nm, or 3000–4500nm. ■By adjusting the RF frequency and intensity, filtering can be performed quickly and accurately with a resolution of 2nm or more.

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■Supports a wide wavelength range (1000–1200nm / 1250–1350nm / 1500–1600nm) ■By adjusting the RF frequency and intensity, filtering can be performed quickly and accurately with a resolution of 2nm or more ■Polarization Maintaining Fiber (PMF) ■Wide range spectral color filter

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■Wavelength: Optimized for 1064nm pulse fiber laser ■Single-mode fiber (HI1060) ■Large mode area fiber (Nufern 10/125 GSF) ■High stability and high reliability ■Low insertion loss and low power consumption

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■ Adjustable Bragg angle at specified wavelengths from 500nm to 2100nm, in addition to standard wavelengths of 1064nm and 1550nm, and can be assembled. ■ Integrated RF driver. ■ Polarization-maintaining fiber (PMF). ■ Rise time of 6ns.

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- In addition to the standard wavelengths of 1030–1080nm, 1530–1580nm, and 1960–2040nm, it is possible to adjust the Bragg angle and assemble at the specified wavelength. - Rise time of 6ns or less. - Capable of high-speed On-OFF digital modulation, analog modulation that allows free adjustment of light intensity, and frequency modulation that changes the frequency of light. - Single-mode fiber (SMF) / Polarization-maintaining fiber (PMF).

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■Patch cord production is also possible ■180–2100nm

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■It is possible to achieve over 100W of laser output with a 30mW seed light input. ■It has good spatial mode and is optimal for non-thermal (ablation) processing applications using short pulse lasers. *Can be started immediately by using a seed laser and isolator. *Suitable for customers who require output from a pulse laser.

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■ No need for troublesome heat sink design or installation ■ Capable of amplification of up to over 100W, ideal for short pulse laser light amplification * Reasonably priced and user-friendly * We will also introduce a separate LD for pumping

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■Optimal for light amplification of short pulse lasers *Type A is for fiber assembly only *This product is for those who want to manufacture amplifier modules using tapered fibers.

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■Wavelength range: 200 to 2600 nm ■Signal processing capable up to 1 GHz ■Pulse laser frequency confirmation ■Pulse laser waveform confirmation

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■Quick start-up and shut-down, characterized by high repetitive motion.

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■QDG Series ・μ-wave driver for GHz modulators ・Frequency range: 200MHz to 16GHz ・RF power: 1-5W version ・Features: Q-Lock / F-Lock ・EOM applications: Laser cooling, laser trapping ■QDR Series ・RF driver for MHz modulators ・Frequency range: kHz to 200MHz ・RF power: 0.1 to 10W version ・Features: Q-Lock / F-Lock ・EOM applications: Spectral broadening

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■Q-switch laser cavity ■Mode-locked laser cavity dump ■Laser chopping ■Regenerative amplifier laser

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■ Equipped with a wide wavelength range, low insertion loss, and high damage threshold ■ Extinction ratio: 30dB * This product can be used for various applications.

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■DC Coupled Broadband Phase Shifters ■Laser Wavelength Stabilization (Intracavity) ■Interferometric Measurement ■Broadband Phase Modulation ■Optical Trapping

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■ Free-Space Resonantly Enhanced Phase Modulators ■ Atom Trapping & Cooling (ATC) ■ Ion Trapping & Cooling (ITC) ■ Molecule Trapping & Cooling (MTC) ■ Laser Frequency Stabilization (LFS)

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