クロスライトソフトウェアインク日本支社 List of Products and Services

<Main Features> ■ Self-consistent (self-consistency) 2D/3D simulations of electrical and optical properties ■ Transfer matrix, FDTD, and ray tracing optical models ■ Solar cells including crystalline semiconductors, oxides, amorphous materials, and organic materials ■ Single-junction and multi-junction solar cells ■ Surface texture and optical coatings ■ Non-local tunneling junction model ■ Interface polarization charge in nitride materials ■ User-friendly interface for obtaining IV curves and quantum efficiency ■ For other features and details, please download the catalog or contact us. ■ For requests for a trial version, please contact us using the information below.

• Other analyses

<Main Features> ■ General-purpose 2D/3D finite element analysis and design software for semiconductor devices "APSYS" ■ "CSUPREM," a version of SUPREM developed by Stanford University, uniquely enhanced by Crosslight ■ Mask editing tool (GDSII compatible) ■ Input and editing tool for device cross-sectional structures ■ Graphical display of simulation results <Diverse Physical Models and Functions for Device Simulation> ■ Current-voltage (I-V) characteristics ■ Two-dimensional distribution of potential, electric field, and current ■ Two-dimensional distribution of hot carrier temperature in fluid dynamics models ■ Two-dimensional distribution of lattice temperature used in thermal transport models ■ Band diagrams under various bias conditions ■ Results of AC small-signal response analysis at arbitrary frequency ranges ■ Subbands of quantum wells using a heavy-hole mixing model ■ Two-dimensional distribution of impurity occupancy and density trapped at deep levels in semiconductors ■ Two-dimensional optical field distribution of optical devices such as photodetectors ■ Current dependence of the self-emission spectrum of LEDs ■ For other features and details, please download the catalog or contact us. ■ To apply for a trial version, please use the "Trial Version Application Form."

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■ A video demonstrating the automatic processing of simulations using NovaTCAD is currently available on the YouTube link below! ■ If you would like a trial version, please use the "Trial Version Application Form." (For details about the product, please refer to the product introduction materials.)

• Other analyses

<Main Features> ■ General-purpose 2D/3D finite element analysis and design software for semiconductor devices ■ Applicable to almost all device design and analysis except for semiconductor lasers (Simulation for semiconductor lasers is possible with separate products LASTIP and PICS3D) ■ Usable for the design of devices made from silicon and compounds <Diverse Physical Models and Functions> ■ Current-voltage (I-V) characteristics ■ Two-dimensional distribution of potential, electric field, and current ■ Two-dimensional distribution of hot carrier temperature in fluid dynamics models ■ Two-dimensional distribution of lattice temperature used in thermal transport models ■ Band diagrams under various bias conditions ■ Results of AC small-signal response analysis at arbitrary frequency ranges ■ Subbands of quantum wells using a carrier mixing model ■ Two-dimensional distribution of impurity occupancy and density trapped at deep levels in semiconductors ■ Two-dimensional optical field distribution of optical devices such as photodetectors ■ Current dependence of the self-emission spectrum of LEDs ■ FDTD interface ■ For other functions and details, please download the catalog or contact us. ■ For requests for a trial version, please contact us using the information below.

• Other analyses

■A demo video of the "Trial Guide" is currently available on the YouTube link below! ■To request a trial version, please use the "Trial Version Application Form." (For product details, please refer to the catalog or contact us.)

• Other analyses

<Main Features> ■ Suitable for the design and analysis of devices where the effects in the resonator direction are important. ■ Lasers including diffraction gratings such as DFB, DBR, and VCSEL can be calculated using mode coupling theory and multilayer film optical theory. <Diverse Physical Models and Functions> ■ Coupling coefficients of waveguides and gratings (first-order and second-order gratings). ■ Longitudinal carrier density distribution, optical gain, and light intensity for the main and side longitudinal modes. ■ Calculation of surface emission mode distribution for second-order grating DFB lasers. ■ Output and frequency variation for different longitudinal modes. ■ Side mode ratio, linewidth, product of linewidth and output, effective alpha, second harmonic distortion, surface emission output (second-order grating DFB). ■ Mode output spectra under different laser surfaces and arbitrary bias conditions. ■ Mode output spectra under different bias conditions and over time. ■ AM/FM small signal modulation response and FM/RIN noise spectrum under arbitrary bias conditions. ■ Second harmonic distortion spectrum. ■ For other functions and details, please download the catalog or contact us. ■ If you wish to request a trial version, please contact us using the information below.

• simulator

■A demo video of the "Trial Guide" is currently available on the YouTube link below! ■To request a trial version, please use the "Trial Version Application Form." (For product details, please refer to the catalog or contact us.)

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<Main Features> ■ Simulation software for semiconductor lasers based on a two-dimensional structural model ■ Calculations can be executed more lightly as effects in the resonator direction are not included ■ Convergence is smoother as the finite element calculation mesh is also set in two dimensions <Diverse Physical Models and Functions> ■ Light output-current (L-I) characteristics ■ Current-voltage (I-V) characteristics ■ Two-dimensional potential, electric field, and current distribution ■ Two-dimensional distribution of electron and hole density ■ Band diagrams under various bias conditions ■ Two-dimensional distribution of occupancy and density of deep level traps in semiconductors ■ Two-dimensional optical field distribution of multiple transverse modes ■ Two-dimensional local optical gain distribution ■ Mode-dependent refractive index dependence on bias current ■ Mode-dependent gain and refractive index change dependence on bias current ■ Dependence of spontaneous emission spectrum on current ■ Far-field distribution ■ Time evolution (transient model) and temperature dependence (uniform temperature) of all the above quantities ■ For other features and details, please download the catalog or contact us. ■ If you wish to try a trial version, please contact us using the information below.

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■A demo video of the trial version "Trial Guide" is currently available on the YouTube link below! ■To request the trial version, please use the "Trial Version Application Form." (For details about the product, please refer to the catalog or contact us.)

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Introduction to various options and physical models of the semiconductor device simulator APSYS.

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Options for the PICS3D Fabry-Perot Edition (formerly LASTIP) for semiconductor laser device simulation.

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Introduction to various options and physical models of the semiconductor LD and optical device 3D simulator PICS3D.

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We provide technical training to users in the Japan region. The technical training includes basic and advanced courses. The training content for each course can be flexibly tailored to meet the needs of the users.

• Technical Seminar

This paper introduces examples demonstrating the usefulness of quantum well/quantum dot solar cells by incorporating the miniband model into the drift-diffusion theory framework. Different energies of the minibands allow for the calculation of cold carrier and hot carrier minibands. The quantum states solution of 2D quantum wells and 3D quantum dots precisely calculates the broad absorption spectrum in quantum well/quantum dot materials.

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This paper introduces a demonstration of the usefulness of quantum well/quantum dot solar cells by incorporating the miniband model into the drift-diffusion theory framework. Different energies of the minibands allow for the calculation of cold carrier and hot carrier minibands. The quantum states solution of 2D quantum wells and 3D quantum dots precisely calculates the broad absorption spectrum in quantum well/quantum dot materials.

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The features of device modeling are introduced using APSYS for various physical models and quantum tunneling. The model and material absorption properties for a-Si are explained using a-Si, muC-Si, a-SiGe, and ITO/ZnO. As modeling results for a-Si PIN solar cells, examples of calculations for dual junction muC-Si/a-Si and triple junction a-Si/a-SiGe/a-SiGe tandem solar cells are presented. By combining 2D/3D ray tracing and FDTD modules, it is possible to efficiently design and analyze thin-film solar cells on Si substrates using APSYS.

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An example of 2D/3D simulations of single-junction and multi-junction compound semiconductor solar cells is presented. A non-local tunnel junction model was calibrated through experiments. The solar spectrum was used as a bias to analyze the external quantum efficiency. The I-V characteristics, Isc, Voc, and quantum efficiency showed consistency between modeling and experimental results. From the modeling results of multiple suns, it was shown that the optimal number of suns varies with the spacing of the contact pads, and the effects of different series resistances were demonstrated.

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The flexible material database of Crosslight allows for easy creation of mobility and lifetime data for Si and poly Si as functions of impurity concentration and grain size. It enables device simulation in conjunction with process simulation. The simulation results for Si rear-contacted cells (RCC) match experimental results. By using Crosslight's 2D/3D ray tracing module, simulations that take into account the complex structures and surface states of solar cells can be performed. A PERT cell device with n contact on the surface and buried n contact in the texture and coating was simulated, and the results were selected and presented.

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An example of the laser fired contact (LFC) process using the Crosslight process simulator CSuprem and the device simulator APSYS is illustrated. Ultimately, the LFC structure was incorporated into the rear-contacted cells (RCC) device in APSYS, successfully modeling the solar cell performance. The reasonable performance of the RCC device with LFC was demonstrated. The results discuss the actual laser pulse irradiation and suggest the possibility of Al atoms diffusing into the molten Si. 2D/3D modeling of solar cells with LFC is possible using Crosslight's CSuprem and APSYS.

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An explanation of crystal orientation and polarization. Introduction of physical models to explore the effects of crystal orientation, such as the k.p. method for analyzing quantum wells (QW) at arbitrary crystal orientations. Examples of results using InGaN/GaN QW, including a comparison of optical gain at different crystal orientations, the effects of crystal orientation on c-plane and m-plane, and a comparison of semiconductor laser diode (LD) performance through finite-element simulation.

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Improved the conventional drift-diffusion solver to include various quantum models and non-local transport models. These models are essential for simulating devices that involve quantum and non-local physics. A potential difficulty with such an approach is that users are required to make some judgments regarding validity.

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The quantum tunneling model cannot ignore the impact on carrier transport at high doping levels. The change in aluminum composition grading allows for a pseudo quantum tunneling effect by flattening the potential barrier. However, the distance selection of the aluminum composition grading is crucial. By adding sufficiently many internal extra mesh points, effects similar to those of composition grading can be achieved. The quantum tunneling model is the most reliable method for enhancing carrier transport through quantum mechanics.

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Incorporation of many-body effects and exciton effects, as well as inhomogeneous broadening effects, into the device simulator. The results are consistent with theoretical and experimental data published in the literature. Crosslight recommends a new gain/absorption spectrum model to all users.

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Seamless work and device simulation are possible with the device simulator APSYS and FDTD (with variations). The functionality is demonstrated using example problems related to FDTD for 2D and 3D structured devices included in the APSYS-FDTD package. A 64-bit CPU and OS are required for simulating complex 3D structures, but APSYS is already compatible.

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Developed a unique 2D/3D FDTD simulator by Crosslight. It can be directly connected to Crosslight's device simulator. Script creation and processing using Python are possible. All operations can be controlled from the GUI. Material dispersion is provided by various dispersion models. Equipped with PBC and UPML/CPML absorbing boundary conditions. Acceleration of processing through parallel computation is available using MPI parallel processing or GPU data parallelism.

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The 3D lens structure and CIS 3D CMOS image sensor are picked up as benchmark examples. The GPU version of Crosslight's FDTD shows a 66-fold improvement in processing for 3D real device structures. The benchmark results achieved processing speeds equivalent to a Core i7 3930K PC with 10 clusters (equivalent to 60 cores) using an inexpensive GPU card.

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Overview of the low electric field mobility model. Explanation of the command syntax. Explanation of each function and parameter. Explanation of the simulation setup using NMOS as a subject, along with examples of the calculated results, including plots of Id-Vd characteristics and Id-Vg characteristics.

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Explanation of the device modeling and simulation analysis results of the Gunn Diode. Demonstration of self-oscillation in the Gunn Diode. Transient simulation with perturbations is key to observing effects. The inhomogeneous carrier/electric field profile is crucial for self-oscillation. Since transient mobility diffusion is not modeled as stochastic noise, perturbations should be defined by the user.

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This introduces an overview of 3D calculations using the process simulator CSuprem and the device simulator APSYS. It includes pattern creation using MaskEditor, process simulation based on this pattern, and device simulation of the electrical and optical characteristics of thin-film transistors (TFT) based on the results of the process simulation, along with the display of the results plot.

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Simulated a waveguide modulator using the Franz-Keldysh effect with APSYS. Enhanced by dipole matrix elements obtained from many-body calculations, showing excellent agreement with experimental results. Free-carrier theory alone is insufficient to reproduce the experimental results. The simulation results for electric field, absorption, and transmission align well with the experimental results.

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Introducing the key points of the flow from mask pattern design using MaskEditor, process simulation with CSuprem, to device simulation with APSYS. Additionally, the calculation results are graphically plotted to illustrate the points of analysis and characteristics.

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Introducing 2D/3D simulations using High Voltage MOSFETs as the subject. Content: Overview of the process simulator CSuprem and the device simulator APSYS models, explanation of process simulation, analysis of the breakdown of 300V LDMOS, 3D simulation of floating gates, and 3D simulation of hybrid IGBTs.

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Three-dimensional process and device simulation using Crosslight's TCAD. The functions and mechanisms are introduced through various devices (CMOS image sensors, LDMOS, FINFET, DMOS, LIGBT) including mesh generation, device structure creation, and analysis. Additionally, simulation using GPUs is also introduced.

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Introducing the details of each Crosslight product based on case studies. Explaining Crosslight's Auto TCAD.

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This introduces an overview of device simulations using LDMOS with a race track-shaped polysilicon gate and DMOS with a hexagonal polysilicon gate.

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Introducing the mixed mode of Crosslight that allows for simulation with a combination of circuits (SPICE) and devices. A brief explanation of the mechanism of circuit and device mixed simulations. An example of executing mixed mode and analyzing results using IGBT devices as a subject.

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Explanation of the physical model used for analyzing APSYS's field-effect transistor (FET) devices. Introduction of the quantum ballistic current transport model. Comparison of simulation results for GaN HEMT using the Non-Equilibrium Green's Function (NEGF) method and the drift-diffusion equation in APSYS. The results from NEGF are similar to the experimental results in terms of the shape of the I-V characteristics.

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Simulation and explanation of the issues of piezoelectric polarization, nucleation layer, and semi-insulating traps in GaN/AlGaN HEMTs, hot carrier trapping in GaN/AlGaN HEMTs, and impact ionization effects in InGaAs HEMTs using specific devices.

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Simulation of AlGaN/GaN HEMT with a magnesium layer structure that has a high breakdown voltage. By optimizing the length of the magnesium (Mg) layer and its doping density, a breakdown voltage of 900V is achieved. (Specifically illustrating the length of the magnesium layer, doping density, and the length of the drift region.) The magnesium layer is effective in enhancing the breakdown voltage of AlGaN/GaN devices.

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Introducing the features of a physical model for analyzing nano-wire MOSFETs. A cylindrical coordinate system is used to maximize simulation efficiency. A hybrid approach utilizing NEGF (Non-Equilibrium Green's Function) in the channel region and standard drift-diffusion (DD) in other regions. Flexible selection of subbands including quantum confinement and quantum ballistic electron transport in NEGF. A self-consistent solution of the NEGF equations combined with all other drift-diffusion equations.

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An overview of the simulation flow for SOI FinFETs and the tools used therein is provided. An example of 3D process simulation using the process simulator CSupre is introduced. Based on the structural data created from the process simulation, the features of FinFET modeling in the device simulator APSYS, including quantum confinement, oxide layer dissolution, and quantum ballistic current transport models, along with analysis examples, are presented.

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In STI (shallow trench isolation) confined MOS, the SiO2/Si interface separation causes dopant diffusion in the width direction. For HV (high voltage) MOSFETs, 3D diffusion and narrow gate side fields shift the threshold voltage Vth downward as if reducing the width. In the typical process flow of nanoMOSFETs, reducing the width to W>0.1 um increases Vth. In square-trenched UMOS, the effects of geometry and 3D diffusion shift Vth downward as if reducing the square size.

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This introduces a modeling example of NMOS (N-channel MOSFET) using the process simulator CSuprem. It also illustrates characteristic analysis using the CSuprem device simulator APSYS. Additionally, it obtains the substrate current characteristics of bell-shaped curves from simulations and compares them with experimental results.

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The semi-classical quantum subband valley-averaged mobility model takes into account valley splitting and anisotropy. It allows for a self-consistent solution of the drift-diffusion equations with quantum corrections using the averaged subband density of states and mobility. The characteristics of silicon MOSFETs with various stresses and strains in crystal directions can be predicted.

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The simulation of Mach-Zehnder type optical modulators requires everything from microscopic quantum well models to waveguide and circuit models related to the system. Crosslight provides integrated cutting-edge solutions for the design of Mach-Zehnder type optical modulators. The materials introduce various physical and mathematical models and explain examples of actual modeling.

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