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Drawing device - 企業ランキング(全6社)

更新日： 集計期間:Jul 23, 2025〜Aug 19, 2025
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会社名 代表製品
製品画像・製品名・価格帯 概要 用途/実績例
ハイデルベルグ・インストルメンツ ハイデルベルグ・インストルメンツ
Laser drawing device "DWL 2000 GS" series
Laser drawing device "DWL 2000 GS" series

More than 100million yen

 【Device Performance】 *When using binary drawing and selecting Write Mode 1 ■ Minimum Drawing Size [μm]: 0.5 ■ Minimum L&S [HP, μm]: 0.7 ■ Line Edge Roughness [3σ, nm]: 40 ■ CD Uniformity [3σ, nm]: 60 ■ Registration [3σ, nm]: 200 *For more details, please refer to the catalog or feel free to contact us. 【Applications】 ■ 2.5D grayscale exposure for thick film resist (micro lenses, Fresnel lenses, DOE, holographic printing, security applications, etc.) ■ Exposure to masks and wafers and other substrates ■ Patterning for semiconductors, sensors, MEMS, MOEMS, microchannels, waveguides, and all other applications requiring fine structures *For more details, please refer to the catalog or feel free to contact us.
Laser Direct Writing Device "DWL 66+"
Laser Direct Writing Device "DWL 66+"

More than 100million yen

 【Example of Drawing Mode】 ■Drawing Mode: HR (High Resolution Mode 0.3um) ■Minimum Address Grid (nm): 5 ■Minimum Drawing Size (μm): 0.3 ■Edge Roughness (3σ, nm): 50 ■CD Uniformity (3σ, nm): 60 ■Overlay Accuracy (3σ, nm): 500 *For more details, please refer to the catalog or feel free to contact us. 【Applications】 ■ Small lot mask creation ■ Maskless exposure, laser direct writing, laser direct drawing, 2.5D grayscale exposure ■ Patterning for semiconductors, FPD, sensors, MEMS, microchannels, micro-optics, waveguides, DOE, holograms, and other applications requiring microstructure fabrication *For more details, please refer to the catalog or feel free to contact us.
"ULTRA" series of mask laser drawing devices for semiconductors.
"ULTRA" series of mask laser drawing devices for semiconductors.

More than 100million yen

 【Basic Performance】 ■Minimum Pattern Size: 500nm ■Drawing Speed: 580mm²/min (FX mode), 325mm²/min (QX mode) ■Line Edge Roughness: 20nm (QX mode) ■CD Uniformity: 30nm (QX mode) ■Overlay: 30nm (QX mode) ■Position Accuracy: 40nm (QX mode) ■Maximum Drawing Area: 228mm x 228mm (Optionally up to 400mm x 400mm) ■Auto Loader for Masks *For more details, please refer to the catalog or feel free to contact us. Photomask for semiconductors
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  1. ハイデルベルグ・インストルメンツ ハイデルベルグ・インストルメンツ
    代表製品
    Laser drawing device "DWL 2000 GS" seriesLaser drawing device "DWL 2000 GS" series
    概要
    【Device Performance】 *When using binary drawing and selecting Write Mode 1 ■ Minimum Drawing Size [μm]: 0.5 ■ Minimum L&S [HP, μm]: 0.7 ■ Line Edge Roughness [3σ, nm]: 40 ■ CD Uniformity [3σ, nm]: 60 ■ Registration [3σ, nm]: 200 *For more details, please refer to the catalog or feel free to contact us.
    用途/実績例
    【Applications】 ■ 2.5D grayscale exposure for thick film resist (micro lenses, Fresnel lenses, DOE, holographic printing, security applications, etc.) ■ Exposure to masks and wafers and other substrates ■ Patterning for semiconductors, sensors, MEMS, MOEMS, microchannels, waveguides, and all other applications requiring fine structures *For more details, please refer to the catalog or feel free to contact us.
    Laser Direct Writing Device "DWL 66+"Laser Direct Writing Device "DWL 66+"
    概要
    【Example of Drawing Mode】 ■Drawing Mode: HR (High Resolution Mode 0.3um) ■Minimum Address Grid (nm): 5 ■Minimum Drawing Size (μm): 0.3 ■Edge Roughness (3σ, nm): 50 ■CD Uniformity (3σ, nm): 60 ■Overlay Accuracy (3σ, nm): 500 *For more details, please refer to the catalog or feel free to contact us.
    用途/実績例
    【Applications】 ■ Small lot mask creation ■ Maskless exposure, laser direct writing, laser direct drawing, 2.5D grayscale exposure ■ Patterning for semiconductors, FPD, sensors, MEMS, microchannels, micro-optics, waveguides, DOE, holograms, and other applications requiring microstructure fabrication *For more details, please refer to the catalog or feel free to contact us.
    "ULTRA" series of mask laser drawing devices for semiconductors."ULTRA" series of mask laser drawing devices for semiconductors.
    概要
    【Basic Performance】 ■Minimum Pattern Size: 500nm ■Drawing Speed: 580mm²/min (FX mode), 325mm²/min (QX mode) ■Line Edge Roughness: 20nm (QX mode) ■CD Uniformity: 30nm (QX mode) ■Overlay: 30nm (QX mode) ■Position Accuracy: 40nm (QX mode) ■Maximum Drawing Area: 228mm x 228mm (Optionally up to 400mm x 400mm) ■Auto Loader for Masks *For more details, please refer to the catalog or feel free to contact us.
    用途/実績例
    Photomask for semiconductors
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