I have added 'Characteristics of SiC substrates and the necessity of metallization' as a technical trend keyword.

SiC (silicon carbide) substrates possess characteristics such as high thermal resistance, wide bandgap, and high breakdown electric field strength, making them particularly important in the field of power electronics. Due to their excellent physical properties, SiC substrates are suitable for device applications in high voltage and high temperature environments, and they are expected to significantly improve energy efficiency compared to conventional Si substrates. Therefore, their use is also expanding in test chip-related applications such as TEG chips.
1) Main characteristics of SiC substrates
2) Comparison with GaN (gallium nitride)
3) The necessity of metallization on SiC substrates
Summary
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