Announcement of the introduction of Talos F200E

We thoroughly evaluate and verify power devices from every angle.

■Problem-Solving Ability Consulting that leads to solutions with knowledge and technology Supporting customer schedules with quick responses ■Investigative Ability Skills to pinpoint and visualize malfunctioning areas Deep insight and advanced, delicate sample processing techniques ■Specialized Equipment Liquid tank thermal shock testing at up to 180°C Power cycle testing essential for power semiconductors

• diode
• Transistor

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for analysis - Backside polishing - We accommodate various sample forms. Si chip size: 200um to 15mm square ■ Defective area identification - Backside IR-OBIRCH analysis and backside emission analysis - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Emission analysis: Supports up to 2kV * We address a wide range of defect characteristics such as low-resistance shorts, micro leaks, and high voltage breakdown failures. ■ Pinpoint cross-sectional observation of leak areas - SEM/TEM - We select SEM or TEM observation based on the predicted defects and can conduct physical observation and elemental analysis of leak defect areas with precision.

• Transistor
• Analytical Equipment and Devices
• Contract Analysis

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

• Other semiconductors
• Contract Analysis
• Other contract services

Since semiconductors have different physical properties, new methods are required for failure analysis!

Our company conducts OBIRCH analysis of SiC devices using short-wavelength lasers. SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In the backside OBIRCH analysis of SiC-SBD using short-wavelength lasers, localized melting damage was induced in the SiC Schottky barrier diode, resulting in the generation of pseudo-leaks. Locations of pseudo-leaks that could not be confirmed in the IR-OBIRCH analysis were clearly observed in the GL-OBIRCH analysis. *For more details, please refer to the PDF materials or feel free to contact us.

• Contract Analysis
• Analysis Services

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, due to its different physical properties from Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, destruction of the SiO2 film and damage to the SiC crystal were noted. *For more details, please refer to the PDF document or feel free to contact us.

• Contract Analysis
• Analysis Services

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu office in 1993, we have cultivated our own unique analysis and evaluation techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 ■ OBIRCH analysis supports not only Si but also SiC and GaN devices ■ FIB processing is possible from either side ■ Visualization of the depletion layer formed at the PN junction ■ Elemental analysis such as EDS and EELS is also supported *For more details, please refer to the PDF document or feel free to contact us.

• Semiconductor inspection/test equipment
• Contract Analysis
• Analysis Services

Cross-section production of soft materials has also been realized! 3D reconstruction is possible with Auto Slice & View!

The introduction of the "FIB-SEM Helios 5 UC" is scheduled to start service in November! We will provide shorter delivery times and reliable feedback than ever before. We will achieve high-throughput cross-sectional observation and analysis of a wide range of materials, from semiconductor devices such as power devices, ICs, solar cells, and light-emitting elements, to electronic components like MLCCs and soft materials. With a high-quality beam of up to 100nA, we can process large areas quickly, and by finishing the FIB at low acceleration, it is possible to produce high-quality samples with minimal damage layers. 【Main Features of Helios 5 UC】 ■ High-speed, large-area FIB processing ■ Reduced damage layers through low-acceleration finishing ■ Cryo-FIB processing ■ 3D imaging ■ Complete automation of TEM sample preparation *For more details, please refer to the PDF document or feel free to contact us.

• Analytical Equipment and Devices

Improved resolution for TEM and STEM! Performance has been significantly enhanced, allowing for EDS analysis with four detectors.

Our company will introduce the FEI "Talos F200E" transmission electron microscope system. Compared to conventional models, the resolution of TEM and STEM has improved, and performance has been significantly enhanced, including the capability for EDS analysis with four detectors. Additionally, it is equipped with Drift Corrected Frame Integration (DCFI), which allows for the integration of multiple frames while correcting for drift. 【Specifications (excerpt)】 ■ Acceleration Voltage: 200kV, 80kV ■ TEM Information Limit: ≦0.11nm ■ STEM Resolution: ≦0.14nm ■ Drift Corrected Frame Integration (DCFI) ・Integration of multiple frames while correcting for drift *For more details, please download the PDF or feel free to contact us.

• Other microscopes
• Transmission electron microscope

Insulating oil from old electrical equipment that has been in use for over 30 years may be contaminated with PCBs. Proper disposal is required by the disposal deadline. If you are using a vacuum tube oscillator, please check! - Transformers - Capacitors - Rectifiers, etc. Please consider updating any relevant equipment such as oscillators and hardening equipment as soon as possible. *For more details, please refer to the PDF document or feel free to contact us. ★ For inquiries by phone, please call: Osaka Headquarters → TEL: 072-991-1361 Nagoya → TEL: 052-322-1361 Tokyo → TEL: 03-5472-1361 ★ For inquiries by email, please contact: info@fujidenshi.co.jp *When calling or emailing, please mention that you saw this on "Ipros." Response hours: Monday to Friday, 9 AM to 5 PM.

● This is a leak testing device for small electronic components that does not use fluorinated inert liquids (PFAS-free). ● There is no longer a need for unstable visual confirmation through liquid immersion testing. It adopts a quantitative testing method that allows for stable pressure leak testing. ● It is a tabletop leak testing device specifically for gross leaks, with accuracy equal to or greater than that of liquid immersion testing. ● The detectable range is approximately 1×10⁻² Pa·m³/s to 1×10⁻⁶ Pa·m³/s (varies depending on the target product). ● It is suitable for sealed structures ranging from a few millimeters to a maximum of 80 × 70 mm. Please feel free to contact us for more information!

The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without causing any thermal impact to the base material. Repairs can be carried out even in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is minimized. ◎ For more details, please contact us. ◎ If a detailed technical explanation is needed, please contact us.

The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without causing any thermal impact to the base material. Repairs can be carried out in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is minimized. ◎ For more details, please contact us. ◎ If you require a detailed technical explanation, please contact us.

The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without affecting the base material with heat. Repairs can be carried out in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is minimized. ◎ For more details, please contact us. ◎ If a detailed technical explanation is needed, please contact us.