Total solution service for power devices

Our company will introduce the FEI "Talos F200E" transmission electron microscope system. Compared to conventional models, the resolution for TEM and STEM has improved, and performance has been significantly enhanced, allowing for EDS analysis with four detectors. Additionally, it is equipped with features such as drift-corrected frame integration (DCFI), which accumulates multiple frames while correcting for drift.

I will introduce the three-dimensional reconstruction of failure locations using the Slice & View function of FIB-SEM. Continuous SEM images of the structure are obtained, and the resulting images are corrected for positional misalignment between the SEM images and visualized in three dimensions using 3D construction software (Avizo). By combining the position identification technique for cross-sectioning the failure location with the Slice & View function, it is possible to obtain continuous SEM images that retain the defective state and include information before and after the abnormal area.

Our company conducts "IOL testing of discrete semiconductors." We repeatedly turn the power ON/OFF in a room temperature environment, applying stress to the device due to temperature changes caused by the device's own heat generation during power ON. During power OFF (cooling), forced cooling is also performed using a fan. Additionally, before conducting the tests, we use representative samples to make adjustments to reach the test temperature conditions. It is possible to adjust the current/time during heating and the fan capacity/timing during cooling.

At Aites Co., Ltd., high-temperature reverse bias testing (HTRB) for evaluating the oxide film and junction of power devices can be applied up to a maximum of 2000V. By monitoring the leakage current during the test, the degradation status of the device can be grasped in real-time. Since the power supply is independent, if one device fails during the test, it will not affect the other devices. Additionally, it is possible to set a failure criterion (current value) and to cut off the power supply to the device deemed faulty at the time of failure judgment. 【Specifications and Service Details】 ■ Test Voltage: Up to a maximum of DC 2000V ■ Applied Current: Up to a maximum of 14mA ■ Number of Test Devices: Up to a maximum of 8 (independent power supply) ■ Compatible Modules: TO-247, TO-220, etc. (other packages require consultation regarding connection methods) ■ Measurement Content: Monitoring of leakage current ■ Temperature Range: Up to a maximum of 200°C (85°C/85% in high temperature and high humidity conditions)