NBD: Strain analysis of micro-regions using Nano Beam Diffraction.
The NBD method allows us to gain insights into lattice strain from the changes in the diffraction angle of the electron beam (positions of electron diffraction spots) within the sample. Measurements can be conducted in any arbitrary crystal axis incident direction, tailored to the device pattern. Results measured on the Si substrate in the element separation region (around LOCOS) confirmed that the strain varies depending on the heat treatment temperature and crystal orientation.
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For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of LSI and memory.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!