Introducing the analysis results of a sample where boron was ion-implanted into silicon using SIMS.
Impurity analysis is important in material development, and secondary ion mass spectrometry (SIMS), which can perform high-sensitivity analysis, is suitable for this purpose. Here, we present the results of analyzing a sample in which boron was ion-implanted into silicon at an energy of 3 keV using SIMS (ULVAC: ADEPT-1010). It is particularly evident that the depth profile of boron can be accurately analyzed due to oxygen leakage. *For more details, please refer to the PDF document or feel free to contact us.*
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The Ion Tech Center is a professional group that provides consulting and technical development support in "ion implantation," "physical analysis," and research and development. We aim to be a good partner for companies and university researchers as a creative laboratory equipped with cutting-edge technology and facilities that meet the demands of the times.