Dual-Sided Simultaneous Exposure Mask Aligner BS320

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last updated：Sep 25, 2012

ナノテック

Official site

Simultaneous exposure of both sides of the wafer. Supports medium lot production with semi-automatic operation!

The BS320 dual-sided simultaneous exposure mask aligner has a proven track record in research and development as well as small to medium lot production. It adopts a method where the primary exposure is done simultaneously on both sides, and subsequent exposures are done one side at a time, making it a simple and versatile model. Customization to meet various needs is also available. Since the subsequent exposures are done on one side, a separate "sample stage" is required. The BS320u, which allows for simultaneous dual-sided exposure even after the primary exposure, is also part of the lineup. It supports semi-automatic operation for medium lot production. For more details, please contact us or refer to the catalog.

Related Link - http://www.nanotech-inc.co.jp/index.html

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【Features】 ○ Design rule: 3μm ○ Equipped with two lamp houses for simultaneous exposure of the front and back of the wafer (only for primary exposure) ○ Supports a maximum wafer size of φ4 inches ○ Minimum distance between objective lenses is 8mm, accommodating small samples (optional) ○ Transmitted illumination from below is available during alignment of the upper and lower masks ○ Compact design ○ Semi-automatic operation is possible with a foot switch (during primary exposure) ○ Easy to accommodate non-standard shaped samples due to hand placement ○ Wafer positioning guide included (optional) ○ XY-axis stage microscope for multi-point observation of alignment marks (optional) 【Specifications】 ○ Applicable mask: maximum opening of 5 inches → Changing mask and wafer sizes requires replacement of the upper and lower mask holders ○ Exposure performance: effective exposure area φ105mm, Hg lamp 250W ○ UV intensity → Upper side approximately 15mW/cm² or more → Lower side 15mW/cm² or more (at 365nm) → Intensity uniformity approximately ±10% ○ Exposure resolution: line & space 3μm → This is not the final processing accuracy of the device. ○ Exposure method: contact method (contact pressure adjustable) → Proximity exposure is possible only on the top surface of the wafer ● For more details, please contact us or refer to the catalog.