Laser light oblique incidence interferometer compatible with a maximum φ200mm; image analysis using phase shift method.
This is a digital measurement of various samples by analyzing interference fringes using a phase shift method with a laser light oblique incidence interferometer. It is used in research and development of semiconductor wafers (GaN, SiC, sapphire) to improve quality in mass production lines.
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basic information
【Features】 - Capable of measuring samples such as wafers (silicon, compound, oxide, glass), metal pieces, disks (aluminum, glass), and mechanical parts. - Our proprietary phase shift analysis that supports multiple interference fringes. - Equipped with a unique interference adjustment mechanism that reduces back-side interference when measuring transparent samples. - No calibration required by the customer. - Capable of high-precision analysis of back-side interference fringes (thickness variations) for transparent samples. - Easy operation through system control with a dedicated analysis device (Windows OS based). - A wide range of options available.
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Research and development of semiconductor wafers (GaN, SiC, sapphire) for quality improvement in mass production lines.
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Since its founding in 1971, Nidek has continued to create distinctive technologies and products by merging optical technology and electronic technology. (In 2021, we celebrated our 50th anniversary.) Currently, we are conducting business activities on a global scale, focusing on three main areas: the medical field, the eyewear equipment field, and the coating field. This site introduces the "coating field."
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