Low-damage processing and polishing processes and evaluation of SiC and GaN wafer substrates.
S30961
Latest polishing technology for various GaN/SiC related materials with high hardness and brittleness.
★What does the future hold for technologies that support large-diameter processing and mass production techniques? ★We will also introduce the characteristics of the residual processing altered layer remaining during SiC wafer processing, its impact on subsequent processes, and analysis techniques for the altered layer. ★We are currently conducting a pre-content request service! We welcome your practical challenges! 【Venue】 Tekno Kawasaki, 5th Floor, 5th Training Room【Kanagawa, Kawasaki】 【Date and Time】 September 17, 2013 (Tuesday) 11:00-15:45 【Instructors】 Part 1: Dr. Tomohisa Kato, Team Leader and Senior Researcher, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST) Here is the homepage of the Advanced Power Electronics Research Center. Part 2: Representative from Namiki Precision Jewel Co., Ltd., NJC Technology Research Institute Part 3: Professor Kazuto Yamauchi, Graduate School of Engineering, Osaka University
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basic information
**Part 1: Lecture Overview** This lecture will provide an overview of SiC processing technology from ingot cutting to finishing polishing, covering both current and latest technologies, and will discuss future developments in large diameter processing and mass production technology. Additionally, the characteristics of the residual processing altered layer remaining during SiC wafer processing, its impact on subsequent processes, and analysis techniques for the altered layer will also be introduced. **Part 2: Lecture Summary** We have devised a catalyst surface reference etching method that achieves damage-free flattening and smoothing with high efficiency and stability by introducing a reference surface based on chemical etching. In the lecture, we will elaborate on the concept of this method based on practical examples, explaining the advantages of being free of fine particles, environmental compatibility, general applicability, and potential for development. **Part 3: Lecture Overview** Single crystal materials such as GaN and SiC, used in LED and power electronics applications, are attracting attention in the next-generation optomechatronics field. This is due to the remarkable advancements in the growth technology of these single crystal materials, which were previously considered difficult, leading to a surge in expectations for practical applications. This lecture will introduce the forefront of processing technology development aimed at mass production of GaN and SiC substrates, focusing on the efforts of the authors.
Price information
Until September 3rd, the early bird discount price is 54,600 yen (including tax and text costs) for up to 2 people from one company.
Price range
P2
Delivery Time
P2
Applications/Examples of results
Part 1: Cutting, Grinding, Precision Polishing, and Evaluation Points in SiC Wafer Processing 【11:00-12:15】 Instructor: National Institute of Advanced Industrial Science and Technology Part 2: Precision Polishing Technology for Optomechatronics Single Crystals – Aiming for Mass Production Polishing Technology for GaN and SiC Substrates 【13:00-14:15】 Instructor: Namiki Precision Jewel Co., Ltd. Part 3: Polishing and Flattening Technology for SiC and GaN Substrates Using Catalyst Surface Reference Etching Method 【14:30-15:45】 Instructor: Osaka University
Company information
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