This is a structural analysis report of Samsung 3D V-NAND.
This report is a Memory Detailed Structural Analysis (MDSA) of the K9HQGY8S5M 3D V-NAND flash memory. The K9HQGY8S5M is the industry’s first implementation of a 32 cell vertical NAND memory and marks the departure from conventional planar flash memories. 【Features】 ○ Understand key design and manufacturing innovations ○ Make informed technical resource investment decisions ○ Find Evidence of Use For more details, please contact us or download the catalog. *This catalog is in English.
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Table of Contents ○Executive Summary ○Device Summary ○Process Summary ○1.0 Package and die overview ○2.0 Substrate and Isolation analysis ○3.0 Representative Transistors ○4.0 Metals and Dielectrics ○5.0 Contacts and Vias ○6.0 High Voltage Transistor ○7.0 Flash Cell Analysis ○8.0 Materials Analysis ○9.0 Horizontal dimensions for array and periphery ○10.0 Vertical dimensions ○11.0 Major Findings For more details, please contact us or download the catalog. *This catalog is in English.
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For more details, please contact us or download the catalog. *This catalog is in English.
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