Detailed Memory Structure Analysis Report of Flash Memory
This report is a detailed structural analysis of the SK Hynix H2JTDG8UD1BMS (16 GB, 16nm node MLC NAND flash memory) used in the Apple iPhone 6 Plus smartphone. The device is manufactured using a three-layer metal structure process (1st and 2nd metal layers: W, 3rd metal layer: Al), polysilicon control gates, and polysilicon floating gates. The memory array features a bit line pitch of 32nm and a word line pitch of 38nm. An air gap is employed to reduce crosstalk between adjacent cells. [Features] ○ Understanding of key design and manufacturing innovations ○ Informed technical resource investment decisions based on appropriate information For more details, please contact us or download the catalog.
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【Table of Contents】 ○Overview of Key Points ○Overview of the Device ○Overview of the Process ○Package and Die ○Process ○Layout and Structural Analysis of NAND Flash Cells ○Material Analysis by EDS ○Dimensions ○Main Findings ●For more details, please contact us or download the catalog.
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