You can visualize the diffusion layer structure of SiC devices.
In SCM, it is possible to identify the p/n polarity of semiconductors and visualize the shape of the diffusion layer. This method has been utilized for Si devices, but it can also be applied to SiC devices in areas where the carrier concentration is sufficiently high. This document presents the results of SCM analysis conducted on a cross-section of a SiC Planar Power MOS.
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Analysis of power devices.
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Download All Catalogs![[Analysis Case] SCM Analysis of SiC Planer Power MOS_C0252](https://image.mono.ipros.com/public/catalog/image/01/1a7/333664/IPROS2467688763859276970.jpg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!