[Analysis Case] Depth Profile Concentration Analysis of Impurities in GaN-based LEDs Using SIMS
Measurements will be taken under analysis conditions suited to the purpose.
We will introduce a case where the depth concentration distribution of dopant elements such as Mg and Si in GaN-based LED structures was evaluated using multiple analysis modes. By selecting the optimal analysis mode according to the purpose in SIMS analysis, more precise evaluations can be achieved, so please feel free to consult with us.
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For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of lighting, power devices, and optical devices.
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Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!