Correction of sensitivity coefficients and sputtering rates across all depths in response to changes in the sample matrix, enabling high-precision depth profile analysis.
PCOR-SIMS (Point by point Corrected SIMS) is an analytical method uniquely developed by EAG Laboratories based on SIMS, leveraging years of experience and expertise. It corrects the sensitivity coefficients and sputtering rates for all points in the depth direction in response to changes in the sample matrix, enabling the acquisition of highly accurate depth profiles. PCOR-SIMS is effective for evaluating trace elements and compositions in compound semiconductors, as well as for assessing ultra-shallow ion implantation distributions of elements such as B, As, and P.
Inquire About This Product
basic information
- Depth profile analysis of dopant concentration in compound semiconductors - Thickness analysis of epitaxial layers in compound semiconductors - Evaluation of ultra-low energy ion implantation distribution in Si substrates
Price range
Delivery Time
Applications/Examples of results
- Evaluation of the compound semiconductor AlGaAs (VCSEL LASER depth composition, impurity concentration analysis) - Analysis of the heterojunction bipolar transistor (HBT) - Evaluation of the ultra-shallow boron implantation distribution on Si substrate
catalog（2）
Download All Catalogs
Company information
If you are having trouble with material analysis, please feel free to consult EAG! ● High-quality analysis ● Short delivery time ● Quick response Eurofins EAG (abbreviated as EAG) has been providing material analysis services for over 40 years in the semiconductor industry, high-purity metals, and advanced/nano materials fields. We respond to customer needs with our long-standing technical expertise and quick delivery in SIMS analysis (Secondary Ion Mass Spectrometry), which is essential for process development, research and development, and quality assurance of semiconductor devices and manufacturing equipment, as well as TEM/STEM analysis (Transmission Electron Microscopy) and GDMS analysis (Glow Discharge Mass Spectrometry) used for impurity analysis of high-purity materials.