Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.
In general, the quantification of major elements with concentrations exceeding a certain percentage in SIMS is considered to be low. However, by using the M Cs+ (M: element of interest) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major element elements in the depth direction. An example of depth compositional evaluation for Al, Ga, and In in GaN-based LED structures is presented.
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Analysis of lighting, power devices, and optical devices.
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