Capable of evaluating the composition of the main elemental components of compound semiconductors in the depth direction.
Generally, in SIMS, the quantification of major elements with concentrations exceeding a certain percentage is considered to be low. However, by using the M Cs+ (M: target element) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major elements in the depth direction. An example of depth compositional evaluation for Al and Ga in AlGaAs is presented.
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Applications/Examples of results
Analysis of lighting and optical devices.
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