[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS
Can be evaluated with high reproducibility.
Due to the miniaturization of devices, it is necessary to evaluate the depth distribution of impurities in extremely shallow regions. To perform an accurate evaluation, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. In this study, the relative standard deviation of the surface density of B calculated from six measurements conducted over multiple days using a 1 keV oxygen ion beam on Si wafers implanted with B+ at low energy was found to be less than 3%, demonstrating that high reproducibility can be achieved in the evaluation of extremely shallow impurity distributions, similar to conventional SIMS analysis.
Inquire About This Product
basic information
For detailed data, please refer to the catalog.
Price information
-
Delivery Time
Applications/Examples of results
Analysis of LSI, memory, oxide semiconductors, power devices, optical devices, and electronic components.
catalog（1）
Download All Catalogs![[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution by SIMS_C0006](https://image.mono.ipros.com/public/catalog/image/01/006/210258/IPROS360342599862583076.jpg?w=120&h=170)
Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!