[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device
Impurities in films and interfaces such as plating can be evaluated using TOF-SIMS.
Impurities from components of the film formation device, target materials, and plating solutions can contaminate the device and have adverse effects, making the qualitative assessment of impurities on surfaces, within films, and at interfaces important. TOF-SIMS can sensitively evaluate unknown elements present on surfaces, within films, and at interfaces in a single measurement due to the following three characteristics: 1. For metallic elements, ions from m/z 1 to 800 can be detected simultaneously in one measurement. 2. Detection sensitivity of a few ppm can be achieved (varies depending on materials and ions). 3. The use of a sputter gun allows for the evaluation of depth distribution.
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Measurement Method: [TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry Product Fields: LSI & Memory, Power Devices, Optical Devices, Electronic Components, Manufacturing Equipment & Parts, Oxide Semiconductors Analysis Purpose: Failure Analysis, Defect Analysis, Product Investigation
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Analysis of LSI, memory, power devices, optical devices, electronic components, manufacturing equipment and parts, and oxide semiconductors.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!