Cross-sectional mapping allows for the evaluation of the crystal growth of GaN.
Gallium nitride (GaN) is used as a material for LEDs and power devices due to its high thermal conductivity and high breakdown voltage characteristics. In the manufacturing process of these products, it is essential to produce high-quality GaN crystals without crystal defects that can affect device characteristics. This document presents a case study evaluating the crystal state of samples in which c-GaN crystals were grown at high speed on c-plane GaN substrates (c-GaN substrates).
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Analysis of power devices.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!