Atomic-level observation is possible with the Cs collector-equipped STEM.
GaN, which is being utilized as a power device and optical device, has a hexagonal wurtzite structure and exhibits crystallographic asymmetry (Ga polarity and N polarity) in the c-axis direction. The growth processes of epitaxial films differ between Ga polarity and N polarity, and the surface physical properties and chemical reactivity of the crystal also vary. In this document, the polarity of GaN was evaluated through annular bright field (ABF)-STEM observation. As a result, the positions of the Ga sites and N sites were identified, allowing for a visual clarification of the characteristics of Ga polarity and N polarity. Measurement method: TEM Product fields: Power devices, optical devices Analysis objectives: Shape evaluation, structural evaluation, thickness evaluation For more details, please download the document or contact us.
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Analysis of power devices and optical devices.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!