[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films Using SIMS
It is possible to quantitatively evaluate impurity elements.
Gallium oxide (Ga2O3) has a higher band gap and superior physical properties compared to SiC and GaN, making it a material of interest for power devices that can be expected to be high-efficiency and low-cost. Controlling the impurity concentration, which affects the characteristics, is crucial in wafer development. This document presents a case study of impurity concentration analysis in Ga2O3 films. It is found that B and C are below the background level, while Si is present. MST offers a range of Ga2O3 standard samples and can quantify over 30 types of impurities.
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Analysis of power devices.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!