SIMS: Secondary Ion Mass Spectrometry
In the quantitative and compositional evaluation of impurities in the semiconductor material SiGe using SIMS, the following considerations must be taken into account during analysis: ● If appropriate quantification corrections are not made according to the Ge concentration, the impurity quantification values may differ by more than 50% from the actual values. Standard samples corresponding to each composition are necessary for quantitative evaluation. ● It is known that the sputtering rates differ between Si and SiGe. In samples where the composition varies with depth, the sputtering rate changes with depth as well. At MST, high-precision compositional analysis is possible through the preparation of standard samples. Additionally, by using calibration curves, impurity analysis and sputtering rate corrections for each composition of SiGe can be performed.
Inquire About This Product
basic information
For detailed data, please refer to the catalog.
Price information
-
Delivery Time
Applications/Examples of results
Analysis of LSI and memory.
catalog（1）
Download All Catalogs
Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
