Local structural analysis around silicon, quantification of intermediate oxides, evaluation of bulk and interfaces.
Silicon oxide films are widely used as gate dielectrics in MOS devices and as anode materials in lithium-ion secondary batteries, but it is known that the presence of intermediate oxides and the bonding states at the interface have a significant impact on device characteristics. XAFS measurements using synchrotron radiation can detect information from a depth of several tens of nanometers from the sample surface, allowing for non-destructive analysis of the structure and bonding states in both bulk and at the interface. This document presents a case study investigating the presence of intermediate oxides in silicon oxide films using XAFS.
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Analysis of solar cells, secondary batteries, displays, oxide semiconductors, power devices, and electronic components.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!