| Semiconductor Laser | Semiconductor Laser Device | LD | LD Device | LD Module |
We have a variety of LD elements from various manufacturers, categorized by wavelength and power, available both domestically and internationally.
We offer semiconductor laser (laser diode, LD) devices with maximum output up to several kilowatts in the wavelength range of 375 to 2000 nm.
A semiconductor laser (LD) is a device that generates laser oscillation by passing current through a semiconductor. The mechanism of light emission is similar to that of a light-emitting diode (LED), where light is produced by flowing current in the forward direction of the pn junction. The forward direction means connecting the power supply so that the p-side is positive and the n-side is negative, allowing electrons to flow in from the n-side and holes from the p-side. When these two collide at the junction, light is generated as electrons fall into holes. The structure of the LD consists of an active layer (emission layer) sandwiched between n-type and p-type cladding layers, built on an n-type substrate, allowing current to flow from the electrodes. The end faces of the active layer serve as mirrors, reflecting light. When a voltage is applied in the forward direction, electrons flow from the n-type cladding layer and holes from the p-type cladding layer into the active layer, where they recombine to produce light. This light is not yet laser light; since the refractive index of the cladding layer is lower than that of the active layer, the light is confined within the active layer. Additionally, the end faces of the active layer act as mirrors, causing the light to be amplified as it travels back and forth within the active layer, resulting in stimulated emission (a phenomenon where strong light of coherent phase is generated), which produces laser light. The key difference between this process and that of an LED is that in the case of an LED, the emitted light is released directly to the outside without being reflected back.
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basic information
The emission wavelength of a laser diode (LD) is fundamentally determined by the bandgap energy of the semiconductor used in the active layer. However, when examining the spectrum of lasers in detail, differences can be observed depending on the type of LD. The simplest structure of LD is used in many applications such as optical pickups for CDs, DVDs, and BDs, laser printers, and fiber laser excitation. A characteristic feature is the mirror surfaces placed at both ends of the active layer, referred to as cleaved surfaces. The wavelength of the laser light is primarily determined by the bandgap energy of the active layer. Due to the bandgap of the active layer, it oscillates at multiple wavelengths. Oscillating at multiple wavelengths results in laser light that is unsuitable as a signal light source for optical communication. This is because when transmitting digital signals through optical fibers, the signal waveform spreads, causing errors, making it unsuitable for long-distance communication. This type is referred to as a Fabry-Pérot (FP) LD. The DFB laser (Distributed Feedback Laser) is a single-wavelength laser. Its mechanism involves creating a diffraction grating at the boundary between the active layer and the cladding layer, which selectively amplifies light at wavelengths that are twice the width of the diffraction grating, resulting in a single-wavelength laser suitable for long-distance, high-capacity optical communication.
Price information
Prices may fluctuate due to quantity and exchange rate changes, so please feel free to contact us.
Price range
P4
Delivery Time
※The delivery time may vary depending on the quantity, so please feel free to contact us.
Applications/Examples of results
Usage: Inspection devices, measuring instruments, sensor equipment, communication devices, processing machines, Achievements: Light sources, parallel light measuring instruments, high-precision length measuring instruments, soldering machines, engraving machines Delivery achievements: Tokyo Institute of Technology, National Institute of Advanced Industrial Science and Technology, Osaka University, University of Tokyo, University of Electro-Communications, Tohoku University, Tokushima University, Keio University, Tsinghua University in China, RIKEN, NTT Research Institute, OptoCom Co., Ltd., Mitutoyo Corporation, University of Colorado, Brain Function Research Institute, Kinki University, Fukui University School of Medicine, Gunma University School of Medicine, Ocean University, Domestic handling manufacturers: Nichia Chemical, Anritsu, Hamamatsu Photonics, Sony, Sharp, Mitsubishi, Rohm, Furukawa Electric, NEL, Overseas handling manufacturers: Gooch & Housego, EM4, Inc, QPhotonics, LLC, Eagleyard, PRINCETON OPTRONICS, Wavespectrum Laser, Inc, Copyright Axcel Photonics, Inc, Superlum Diodes Ltd., RPMC Lasers, Inc, Focuslight Technologies Inc, Innolume GmbH
Detailed information
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Nichia Chemical Blue Laser The specifications of the Nichia Chemical blue laser model number [Ndb7k75] are as follows: Optical output: 3.6W, central wavelength: 448nm, threshold current: 270mA, drive current: 2.3A, operating voltage: 4.3V. We offer a dedicated connector for this type of 2PIN laser and a temperature-controlled LD mount. We also have lens systems for collimation. If you consult with us, we can provide a system including a power supply that meets the drive specifications.
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UV-LD wavelength 375nm The specifications of the UV-LD model number [L375P70MLD] are as follows: Optical output: 70mW, center wavelength: 375nm, drive current: 120mA. We offer a dedicated connector for this module type 4PIN laser and a temperature-controlled LD mount. We also have lens systems prepared for collimation. If you consult with us, we will provide a system including a power supply that meets the drive specifications.
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The Anritsu SLD Superluminous Diode The specifications for the Anritsu SLD model number [AS6B118GM50M] are as follows: Optical output: 10 mW, center wavelength: 1650 nm, drive current: 420 mA, operating voltage: 2 V. We offer a dedicated connector for this butterfly-type 14PIN laser and a temperature-controlled LD mount. We also have a lens system prepared for collimation. If you consult with us, we can provide a system that includes a power supply tailored to the drive specifications.
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Ultra-narrow linewidth laser diode Selected as an optimal LD module for commercial and military fiber optic sensor applications, including interferometric measurements in the oil and gas industry and Brillouin DTSS systems, as well as coherent communication. - Wavelength: 1530–1565nm - Output: Max 20mW with low phase noise and low RIN - Narrow linewidth: 3kHz When driven by our LD driver, it can faithfully reproduce a noise-free ultra-narrow linewidth characteristic.
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The specifications of the Furukawa Electric FITEL LD model number [FOL1437] are as follows: Optical output: 500 mW, center wavelength: 1465-1500 nm, drive current: 1800 mA, operating voltage: 2.5 V. We offer a dedicated connector for this butterfly-type 14PIN laser and a temperature-controlled LD mount. We also have lens systems for collimation. If you consult with us, we can provide a system that includes a power supply tailored to the drive specifications.
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Superlum manufactured 800-870 nm The specifications of the Superlum LD model number [SLD-37-HP] are as follows: Optical output: 50 mW, center wavelength: 840 nm, drive current: 275 mA, operating voltage: 2.6 V. We offer a dedicated connector for this butterfly-type 14PIN laser and a temperature-controlled LD mount. We also have a lens system prepared for collimation. If you consult with us, we will provide a system that includes a power supply suitable for the drive specifications.
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The specifications of the Axcel Photonics LD model number [SLD-37-HP] are as follows: Optical output: 10W, central wavelength: 808nm, output fiber: 400μm. We offer a dedicated connector for this module type 9PIN laser and a temperature-controlled LD mount. We also have lens systems prepared for collimation. If you consult with us, we will provide a system that includes a power supply suitable for the drive specifications.
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BWT Beijing-LD model number [K808DA9RN-100.0W] specifications are as follows: Optical output: 100W, central wavelength: 808nm, drive current: 9.0A, drive voltage: 28.6V, threshold current: 1.4A. This module is equipped with a dedicated connector for 6PIN lasers and a temperature-controlled LD mount. Additionally, collimating lens systems are also available. If you consult with us, we can provide a system including a power supply based on the drive specifications.
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The specifications for the BWT Beijing-LD model number [PR-HPIL-4800-W0808] from Princeton Optronics, Inc. are as follows: Optical output: 4.8KW, center wavelength: 810nm, drive current: 135A, drive voltage: 115V. We provide dedicated connectors for lasers related to this module, as well as a temperature-controlled LD mount. Additionally, we have large collimating lens systems available. If you consult with us, we can offer a system that includes power supply and cooling chiller based on the drive specifications.
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Company information
We undertake contract development and mass production of new products based on engineering technologies such as mechanical mechanisms, molds, electricity, and optics (lasers). The areas of contract development include the realization of research themes from industry, academia, and government, production equipment, medical and welfare devices, measuring instruments, electric vehicles, etc. We also realize various community comprehensive support projects for local governments. Our proposal allows you, regardless of the distance during your business trips, to use the free Skype system to communicate intentions in detail through live cameras (video and audio), enabling face-to-face discussions on-site to reach conclusions. Are you currently having meetings or administrative tasks with multiple companies? By consolidating vendors, your intentions can be directly conveyed to the manufacturing site, reducing the manufacturing burden (experimental preparation) that has previously fallen on you, allowing you to focus on your original research activities that add higher value. In the case of students, there may be many areas where they lack experience, such as element technologies, material selection, surface treatment methods, and drawing creation. However, without feeling ashamed, by sharing ideas from the conceptual stage, we leverage our years of support experience to provide advice and backup for realization while understanding your intentions, and we are committed to assisting you responsibly.
