With our extensive development experience and network, we will develop the most suitable equipment to meet our customers' needs.
Our company has engineers who have developed and manufactured GCI devices for a wide range of applications, from industrial to research and development, and we provide GCI devices tailored to various customer needs. The processing method using GCI can achieve sub-nanometer level smoothness for materials that are considered difficult to process with conventional grinding methods, such as WC and diamond, as well as materials that are water-repellent during processing, represented by fluorides. Our GCI source is characterized by its ability to handle high currents, with a proven track record of 1mA (equivalent to several A in monomer ion terms) using SF6 gas clusters.
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basic information
【Gas Specifications】 - Ar, CO2, N2, SF6, etc. 【Ion Energy】 - 10~40 keV 【Irradiation Beam Current】 - Ar > 150 μA, SF6 > 250 μA ● For more details, please contact us.
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Applications/Examples of results
- Surface smoothing of hard-to-process materials such as WC and diamond - Thin film formation using GCIB - Surface modification of materials
Company information
Our company is composed of members with extensive experience and achievements in the application devices using ion and gas cluster ions, primarily ion beam sputtering (IBS) devices and gas cluster ion beam (GCIB) devices. We engage in the development, manufacturing, sales, and maintenance of these devices, while also carrying out process startup and processing using the same devices.
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