The diffusion layer structure of SiC devices can be visualized (high-sensitivity evaluation of the diffusion layer structure).
In SNDM (Scanning Nonlinear Dielectric Microscopy), it is possible to identify the p/n polarity of semiconductors and visualize the shape of the diffusion layer. This method encompasses the functions of the traditionally used SCM (Scanning Capacitance Microscopy), allowing for sufficient evaluation of next-generation power devices, such as SiC, which are difficult to assess with SCM, from low to high concentrations. It is characterized by high sensitivity and can be applied to all compound semiconductor devices. As an example, we will introduce a case where a cross-section of a SiC Planer Power MOS was fabricated and analyzed using SNDM.
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For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of power devices.
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Download All Catalogs![[Analysis Case] High Sensitivity Evaluation of SiC Planar Power MOS by SNDM_C0551](https://image.mono.ipros.com/public/catalog/image/01/b41/455798/IPROS18423283733732443944.jpg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!