This is an annealing furnace that can be applied to a wide range of applications requiring rapid and uniform heat treatment, including the crystal growth of GaN. 【Testable】
The "VPO-1000-300" is a tabletop vacuum process high-speed heating furnace that is suitable for research and development as well as prototype development, and is among the smallest in the industry. It supports Φ12-inch, Φ6-inch, and 4-inch sizes, and allows for the processing of small sample pieces with a dedicated susceptor. With a maximum temperature of 1000°C, it accommodates a variety of gas purge environments. It can be used for the crystal growth of new materials such as GaN and SiC, as well as for the sintering of paste materials, making it versatile. 【Features】 ■ Supports nitrogen gas, oxygen gas, forming gas (hydrogen + nitrogen) purging, as well as high-concentration hydrogen gas purging. ■ Equipped with 24 IR (infrared) heaters for precise high-speed heating. ■ High-purity quartz chamber. ■ Cooling compatible with nitrogen gas purging method. ■ Up to 4 process gas lines (MFC). ■ Achieves a vacuum level of 0.1 Pa (10^-3 Pa possible with HV model equipped with TMP). ■ Standard touch panel monitor for easy operation. *For more details, please refer to the PDF document or feel free to contact us.
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basic information
【Specifications】 ■Device Size (WxDxH): 504 x 504 x 830mm ■Device Weight: Approximately 105kg ■Effective Object Size (WxD): 300 x 300mm ■Heating Method: Cross-arranged IR Heater ■Maximum Reachable Temperature: 1000℃ ■Maximum Heating Rate (depending on the thermal capacity of the object): 75K/sec. ■Maximum Cooling Rate (depending on the thermal capacity of the object): 190K/min. (T=1000℃>400℃) ■Cooling Method: Nitrogen Gas Purge Method ■Vacuum Level: 10-1Pa ■Controller: 7-inch Touch Panel Controller (SIMATIC TP-700) ■Number of Profile Program Registrations: Up to 50 Programs ■Number of Program Steps: Up to 50 Steps ■Process Data Storage Location: USB Memory/Ethernet ■Power Specifications: 2x Three-phase 200V 50/60Hz Maximum 50A (Total 100A) *For more details, please refer to the PDF document or feel free to contact us.
Price information
10 million to 15 million yen (depending on the model and options)
Price range
P7
Delivery Time
※The delivery time is approximately 3 to 4 months from the confirmation of your order (please contact us for more details as the delivery time may vary depending on the situation).
Applications/Examples of results
【Applications】 ■ Various high-temperature heat treatments from Si to SiC, GaN, Ga2O3 materials ■ Nitride and oxide film formation ■ Crystal activation after ion implantation ■ Ohmic contact formation ■ Heat treatment of low-k materials ■ Reduction of Si roughness through hydrogen annealing *For more details, please refer to the PDF document or feel free to contact us.
Line up(6)
Model number | overview |
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RTP-100 | |
RTP-100-HV | |
RTP-150 | |
RTP-150-HV | |
RTP-150-EP | |
VPO-1000-300 |
catalog(2)
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