Recovery is possible even with hydrophilic wafers such as SiC, GaN, and sapphire!
The NAC-304 is an automatic trace metal contamination recovery device with bulk etching capabilities for Si wafers. It automatically recovers 25 wafers set in a cassette. Recovery after bulk etching can also be performed with automatic settings. 【Features】 ■ Bulk etching is possible in two sizes: 200mm and 300mm, with settings of **.*μm. ■ The flatness of bulk etching is within 10%, and the accuracy of etching depth is within ±10% (for depths of 0.3μm or more); for 200mm wafers, it is within ±20%. ■ It is also possible to perform bulk etching on a single wafer divided into multiple layers, among other features. *For more details, please download the PDF or contact us.
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【Other Features】 - VPD & recovery can accommodate wafers from 125mm to 300mm - Surface recovery and bevel recovery (hydrophobic surface is a condition) are possible - Recovery time for 300mm wafers is about 10 minutes for hydrophobic surface wafers - Recovery rate is almost 90% or more - Cleanliness of the equipment is generally below 1×10^8 atoms/cm² for 10 elements, etc. *For more details, please download the PDF or contact us.
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Our company has responded to various needs by utilizing surface contamination recovery devices. With technology that has made it possible to recover contamination from hydrophilic surfaces, which was previously thought to be impossible, we will help solve your concerns. Please feel free to contact us if you have any requests.
