HAST test of power devices

At Aites Co., Ltd., high-temperature reverse bias testing (HTRB) for evaluating the oxide film and junction of power devices can be applied up to a maximum of 2000V. By monitoring the leakage current during the test, the degradation status of the device can be grasped in real-time. Since the power supply is independent, if one device fails during the test, it will not affect the other devices. Additionally, it is possible to set a failure criterion (current value) and to cut off the power supply to the device deemed faulty at the time of failure judgment. 【Specifications and Service Details】 ■ Test Voltage: Up to a maximum of DC 2000V ■ Applied Current: Up to a maximum of 14mA ■ Number of Test Devices: Up to a maximum of 8 (independent power supply) ■ Compatible Modules: TO-247, TO-220, etc. (other packages require consultation regarding connection methods) ■ Measurement Content: Monitoring of leakage current ■ Temperature Range: Up to a maximum of 200°C (85°C/85% in high temperature and high humidity conditions)