Analysis of Toshiba Device & Storage SiC MOSFET (TW070J120B)!
We offer the "Toshiba Device & Storage SiC MOSFET (TW070J120B) Structural Analysis, Process, and Device Characteristics Analysis Report." The process and device characteristics analysis report estimates the manufacturing process flow based on the structural analysis results, estimates the number of photomasking process steps, analyzes the doping concentration of the N-epitaxial layer (drift layer), and conducts on-resistance analysis and breakdown voltage analysis. [Analysis Highlights] - Structural Analysis Report - Clarifies the planar layout and cross-sectional structure of the SiC-MOSFET - Conducts cross-sectional structure analysis of the SBD region, which is a feature of this product, and EDX analysis of the SBD metal - Process and Device Characteristics Analysis Report - Measures Schottky diode characteristics and compares them with the built-in body diode characteristics of other companies' SiC-MOSFET products, among other analyses. *For more details, please download the PDF or feel free to contact us.
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【Table of Contents】 ■SiC-MOSFET Structure Analysis Report 1. Device Summary 2. Package Analysis 3. SiC MOSFET Structure Analysis 4. SiC MOSFET EDX Analysis ■SiC-MOSFET Process and Device Characteristics Analysis Report 1. TOSHIBA 1200V SiC MOSFET TW070J120B Executive Summary 2. TOSHIBA 1200V SiC MOSFET TW070J120B Analysis Results Summary 3. Manufacturing Process Flow Analysis 4. Electrical Characteristics Evaluation 5. Related Literature Catalog 6. Related Patent Catalog *For more details, please download the PDF or feel free to contact us.
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Our company is a technology service provider that specializes in delivering technical information (reports) tailored to our customers' needs, utilizing both the semiconductor-based analysis technology we have developed over many years since 1988 and our extensive experience in the investigation and analysis of intellectual property (IP) such as patents.
