Analysis of the Fuji Electric IGBT module for EV and HEV (6MBI800XV-075V-01)!
We provide the "Structural Analysis, Process, and Device Characteristics Analysis Report for Fuji Electric's EV and HEV IGBT Module (6MBI800XV-075V-01)." The Ice-Vce characteristics of the RC-IGBT, off-state collector leakage current, and breakdown voltage are measured, and the activation energy is calculated from the temperature dependence of the off-leak current. A comparison is made with Infineon's IGBT7. [Analysis Points] - The module analysis report confirms the internal structure of the module and clarifies the arrangement and layout of the RC-IGBT. - The chip structure analysis report reveals the planar layout and cross-sectional structure of the IGBT and FWD regions of the RC-IGBT. - The process analysis report discusses the process technology of the RC-IGBT, estimates the number of masks, and outlines the manufacturing process flow, among other details. *For more information, please download the PDF or feel free to contact us.*
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**Table of Contents** ■ RC-IGBT Module Structural Analysis Report 1. Table 1: Device Summary (Module) 2. Module Appearance Observation 3. Module Configuration 4. Cooling Method, Configuration 5. Module Cross-Section Structure & Material Analysis (EDX) 6. Related Patent Catalog ■ RC-IGBT Module IGBT Chip Structural Analysis Report 1. Device Summary 2. Mounted Chip Overview 3. Si IGBT Chip Analysis 4. Cell Section EDX Analysis Results 5. Additional Analysis List ■ RC-IGBT Module IGBT Process, Device Characteristics Report 1. Fuji Electric RC-IGBT (6MBI800XV-075V-01) Executive Summary 2. RC-IGBT Device Configuration 3. Observations and Considerations on Process Technology 4. Manufacturing Process Flow Analysis 5. Electrical Characteristics Evaluation 6. Related Literature Catalog 7. Related Patent Catalog *For more details, please download the PDF or feel free to contact us.*
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Our company is a technology service provider that specializes in delivering technical information (reports) tailored to our customers' needs, utilizing both the semiconductor-based analysis technology we have developed over many years since 1988 and our extensive experience in the investigation and analysis of intellectual property (IP) such as patents.
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