Overview of the manufacturing process flow and clarification of the structure of GaN transistors, resistors, and capacitance.
We provide the "Navitas GaN Power IC (NV6117 & NV6115) Structural Analysis Report." The structures of the low-voltage transistors, resistive elements, capacitive elements, and GaN epitaxial layers of NV6117 and NV6115 are presumed to be similar, and we analyze them using different samples. [Report Contents] ■ Comparison of 600V GaN products (NAVITAS, GaN Systems, Panasonic) ■ Package observation, X-ray observation, chip observation ■ Chip planar observation ■ Cross-sectional SEM analysis of high-voltage/low-voltage GaN transistors, resistive elements, and capacitive elements ■ GaN epitaxial layer TEM-EDX material analysis *For more details, please download the PDF or feel free to contact us.
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【Table of Contents】 1. Device Summary (Table 1) 2. Package 3. Chip Plane Analysis 4. Plane Observation 5. Cross-Sectional Structure Analysis (SEM) 6. TEM Structure Analysis 7. Electrical Characteristics Evaluation: ON Resistance Analysis 8. Appendix Analysis: GaN HEMT EDX Analysis Data *For more details, please download the PDF or feel free to contact us.
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For more details, please download the PDF or feel free to contact us.
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Our company is a technology service provider that specializes in delivering technical information (reports) tailored to our customers' needs, utilizing both the semiconductor-based analysis technology we have developed over many years since 1988 and our extensive experience in the investigation and analysis of intellectual property (IP) such as patents.
