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  5. Memory
  6. 2M-bit FeRAM "MB85RS2MLY"

2M-bit FeRAM "MB85RS2MLY"

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last updated:Jun 07, 2024

RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
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Non-volatile memory suitable for advanced automotive markets such as ADAS.

The MB85RS2MLY guarantees 10 trillion data rewrites in a temperature range of -40°C to +125°C. This characteristic is suitable for applications that require real-time data recording. For example, it is possible to record data every 0.1 seconds for 10 years (over 3 billion times). Additionally, the reliability testing of this product complies with AEC-Q100 Grade 1, a high-quality standard known as automotive grade. Therefore, from both the perspective of data write cycles and reliability, this product is well-suited for applications that continuously detect and record the state of vehicles, such as ADAS. ■ Main Specifications - Product Name: MB85RS2MLY - Capacity (Memory Configuration): 2M bits (256K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Supply Voltage: 1.7V to 1.95V - Operating Temperature Range: -40°C to +125°C - Write/Read Guarantee Cycles: 10 trillion (10^13 times) - Package: 8-pin SOP, 8-pin DFN - Quality Standard: AEC-Q100 Grade 1 compliant

    Memory
IPROS31399828249680153667.jpeg

2M-bit FeRAM "MB85RS2MLY"

IPROS31399828249680153667.jpeg
IPROS31399828249680153667.jpeg IPROS32908108609113548155.jpeg
  • Related Link - https://www.fujitsu.com/jp/group/fsm/products/FeRA…
  • Special site - Product/service details - https://pr.mono.ipros.com/fujitsu-group-fsm/produc…

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We have added the 2M-bit FeRAM "MB85RS2MLY," which operates at a low voltage of 1.8V, to our lineup of FeRAM family products that operate at 125°C. This product is a memory with an SPI interface that operates at a low supply voltage of 1.7V to 1.95V. We are currently providing evaluation samples and mass-produced units. This new product is well-suited for electronic control units in advanced automotive markets, such as advanced driver-assistance systems (ADAS), where low voltage operation is required.

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Suitable for electronic control units that require low voltage operation in advanced automotive markets such as Advanced Driver Assistance Systems (ADAS).

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MB85RS2MLY 2M-bit FeRAM operating at 125℃ and 1.8V low voltage

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Ferroelectric Memory "FeRAM Business Case" *Introducing applications in use!

Ferroelectric Memory "FeRAM Business Case" *Introducing applications in use!

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Fundamentals of Ferroelectric Memory 'FeRAM' - Explanation of what FeRAM is!

Fundamentals of Ferroelectric Memory 'FeRAM' - Explanation of what FeRAM is!

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News about this product(1)

8-pin DFN (front and back) of MB85RS4MTY

Developed a 4M-bit product, which is the maximum memory capacity for FeRAM operating at 125℃.

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■Non-volatile memory for automotive and industrial machinery that guarantees reliability in high-temperature environments The “MB85RS4MTY” is a non-volatile memory with a doubled memory capacity of 4M bits and operates with an SPI interface at a wide power supply voltage range of 1.8V to 3.6V. Even in high-temperature environments of 125℃, the operating current is kept to a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30µA, contributing to low power consumption for environmentally conscious systems. ■Main Specifications - Product Name: MB85RS4MTY - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +125℃ - Write/Read Endurance: 10 trillion cycles - Package: 8-pin DFN, 8-pin SOP

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RAMXEED

RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)

Electronic Components and Semiconductors

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Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.

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